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  1. No Access

    Article

    Growth and Optical Properties of 2D Photonic Crystals Based on Hexagonal GaAs/AlGaAs Pillar Arrays by Selective-Area Metalorganic Vapor Phase Epitaxy

    We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar arrays using selective area (SA) metalorganic vapor phase epitaxy (MOVPE) for the application of two-dimensional photonic cryst...

    J Motohisa, J. Takeda, M. Inari, T. Fukui in MRS Online Proceedings Library (2003)

  2. No Access

    Article

    Quantum dots fabricated by selective area MOVPE and their application to single electron devices

    A novel method of formation of uniform GaAs quantum dot (QD) structures, using selective area metalorganic vapour phase epitaxy (SA-MOVPE), and their application to single electron transistors (SETs) are demon...

    Takashi Fukui, F Nakajima, K Kumakura, J Motohisa in Bulletin of Materials Science (1999)

  3. No Access

    Article

    High Resolution Transmission Electron Microscopy of GaAs/AlAs Hetero-Structures in the <110> Projection

    High resolution transmission electron microscopy (HRTEM) of GaAs/AlAs hetero-structures grown by molecular beam epitaxy (MBE) is carried out in the <110> projection. It is shown that GaAs and AlAs are distingu...

    N. Ikarashi, A. Sakai, T. Baba, K. Ishida, J. Motohisa… in MRS Online Proceedings Library (1990)