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High Resolution Transmission Electron Microscopy of GaAs/AlAs Hetero-Structures in the <110> Projection

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High resolution transmission electron microscopy (HRTEM) of GaAs/AlAs hetero-structures grown by molecular beam epitaxy (MBE) is carried out in the <110> projection. It is shown that GaAs and AlAs are distinguished clearly by the difference in their lattice images at the samples thicknesses of about 15-30 nm under near Scherzer focus condition. Under these imaging conditions, very thin films consist of single monolayer AlAs are observed. Vicinal interfaces of GaAs/AlAs which were grown on (001) substrate misoriented toward [110] are also examined in the [110] projection. The interfacial structures are imaged edgeon, so that the fluctuations of terrace width, and the roughness of step-edges at these interfaces are observed on an atomic scale.

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Acknowledgments

The present authors express their sincere thanks to Y. Matsumoto, M. Mizuta and H. Watanabe for their encouragement.

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Authors and Affiliations

  1. Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, 305, Japan

    N. Ikarashi, A. Sakai, T. Baba & K. Ishida

  2. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo, 106, Japan

    J. Motohisa & H. Sakaki

Authors
  1. N. Ikarashi
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  2. A. Sakai
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  3. T. Baba
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  4. K. Ishida
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  5. J. Motohisa
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  6. H. Sakaki
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Ikarashi, N., Sakai, A., Baba, T. et al. High Resolution Transmission Electron Microscopy of GaAs/AlAs Hetero-Structures in the <110> Projection. MRS Online Proceedings Library 183, 187–192 (1990). https://doi.org/10.1557/PROC-183-187

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  • DOI: https://doi.org/10.1557/PROC-183-187

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