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Article
Growth and Optical Properties of 2D Photonic Crystals Based on Hexagonal GaAs/AlGaAs Pillar Arrays by Selective-Area Metalorganic Vapor Phase Epitaxy
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar arrays using selective area (SA) metalorganic vapor phase epitaxy (MOVPE) for the application of two-dimensional photonic cryst...
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Article
Quantum dots fabricated by selective area MOVPE and their application to single electron devices
A novel method of formation of uniform GaAs quantum dot (QD) structures, using selective area metalorganic vapour phase epitaxy (SA-MOVPE), and their application to single electron transistors (SETs) are demon...
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Chapter and Conference Paper
Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons
An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epi...
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Chapter
Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures
Atomic-scale understanding and controllability of heterointerfaces in MBE-grown quantum wells and other microstructures are reviewed mainly on the basis of our systematic study using the mobility, photolumines...
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Chapter
Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and their Potentials for Infrared Photodetector
The use of intersubband transition processes in superlattices for the detection of infrared radiations was first proposed and analysed in 1977 by Sakaki and Esaki[1] and later reinvented by Smith and Yariv[2]....
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Article
High Resolution Transmission Electron Microscopy of GaAs/AlAs Hetero-Structures in the <110> Projection
High resolution transmission electron microscopy (HRTEM) of GaAs/AlAs hetero-structures grown by molecular beam epitaxy (MBE) is carried out in the <110> projection. It is shown that GaAs and AlAs are distingu...