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    Laser Annealing of Defects in VPE and Cz Grown Gallium Arsenide with a Pulsed Nd:YAG Laser

    Gallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) w...

    P. M. Mooney, J. C. Bourgoin, J. Icole in MRS Online Proceedings Library (2011)