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  1. No Access

    Article

    On the Morphology Changes of Al and Al-Cu Powder After Laser Melting

    Gas-atomized powders are commonly used in additive manufacturing, specifically laser powder bed fusion, due to their high flowability during recoating. Morphological changes can occur in particles that are irr...

    J. M. Skelton, C. V. Headley, E. J. Sullivan… in Metallurgical and Materials Transactions B (2020)

  2. No Access

    Article

    Preferred heteroepitaxial orientations of ZnO nanorods on Ag

    Wurtzite ZnO nanorods were grown from solution onto coarse-grain bulk polycrystalline Ag substrates to explore the nature of preferred heteroepitaxial orientations. ZnO nanorods grow copiously on grains with <...

    J. A. Floro, J. R. Michael, L. N. Brewer, J. W. P. Hsu in Journal of Materials Research (2010)

  3. No Access

    Article

    Composition and Structure of Sputter Deposited Erbium Hydride thin Films

    Erbium hydride thin films are grown onto polished, a-axis α Al2O3 (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while m...

    D. P. Adams, J. A. Romero, M. A. Rodriguez, J. A. Floro… in MRS Online Proceedings Library (2000)

  4. No Access

    Article

    In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

    We present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit stra...

    E. Chason, J. Yin, K. Tetz, R. Beresford, L. B. Freund… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    Self-organized growth of alloy superlattices

    Patterning in nature typically occurs through self-organization, and interest has developed recently in the use of such spontaneous processes to fabricate periodically structured materials at the nanometre sca...

    P. Venezuela, J. Tersoff, J. A. Floro, E. Chason, D. M. Follstaedt, Feng Liu… in Nature (1999)

  6. No Access

    Article

    Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation

    We have used sensitive real-time measurements of film stress during Si1-xGex molecular beam epitaxy to examine strain relaxation due to coherent island formation, and to probe the kinetics of Ge surface segregati...

    J. A. Floro, E. Chason, S. R. Lee, R. D. Twesten… in Journal of Electronic Materials (1997)

  7. No Access

    Article

    Measurements Of Stress Evolution During Thin Film Deposition

    We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity t...

    E. Chason, J. A. Floro in MRS Online Proceedings Library (1996)

  8. No Access

    Article

    Measurements of Stress Evolution During Thin Film Deposition

    We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity t...

    E. Chason, J. A. Floro in MRS Online Proceedings Library (1996)

  9. No Access

    Article

    Smoothing During Ion-Assisted Growth by Transient Ion Beam-Induced Defects

    The growth mechanisms for the deposition of hydrocarbon films (C:H-films) from a methane electron cyclotron resonance (ECR) plasma are investigated by means of in-situ ellipsometry. Ion bombardment during plas...

    B. K. Kellerman, E. Chason, J. A. Floro, S. T. Picraux… in MRS Online Proceedings Library (1995)

  10. No Access

    Article

    Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

    We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain...

    J. A. Floro, E. Chason, S. R. Lee in MRS Online Proceedings Library (1995)

  11. No Access

    Article

    Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique

    We describe a technique for measuring thin film stress using wafer curvature that is robust, compact, easy to setup, and sufficiently sensitive to serve as a routine diagnostic of semiconductor epilayer strain...

    J. A. Floro, E. Chason, S. R. Lee in MRS Online Proceedings Library (1995)

  12. No Access

    Article

    Dielectric Function and Band Gaps of Si1−xCx AND Si0.924−xGe0.076Cx (0≤x≤0.014) Semiconductor Alloys Grown on Si

    We have characterized the optical properties of heteroepitexial Si1−xCx and Si0.924−xGe0.076Cx (0≤x≤0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry. The measured diele...

    Hosun Lee, J. A. Floro, J. Strane, S. R. Lee, E. D. Jones… in MRS Online Proceedings Library (1995)

  13. No Access

    Article

    Reciprocal Space Analysis of the Initial Stages of Strain Relaxation in SiGe Epilayers

    Metastable SiGe films were grown by MBE on Si (001) substrates and annealed to promote varying degrees of partial relaxation. X-ray diffraction reciprocal-space analysis was then used to monitor the structural...

    S. R. Lee, J. A. Floro in MRS Online Proceedings Library (1995)

  14. No Access

    Article

    Mean Field Analysis of Orientation Selective Grain Growth Driven by Interface-Energy Anisotropy

    Abnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the ...

    J. A. Floro, C. V. Thompson in MRS Online Proceedings Library (1994)

  15. No Access

    Article

    Competition between strain and interface energy during epitaxial grain growth in Ag films on Ni(001)

    Epitaxial Grain Growth (EGG) is an orientation-selective process that can occur in polycrystalline thin films on single crystal substrates. EGG is driven by minimization of crystallographically anisotropic fre...

    J. A. Floro, C. V. Thompson, R. Carel, P. D. Bristowe in Journal of Materials Research (1994)

  16. No Access

    Article

    Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001)

    Low energy Ar and Xe ion bombardment of Ge (001) produces large numbers of point defects on the Ge surface and in the near-surface regions. Defect concentrations on the surface are detected and quantified in r...

    J. A. Floro, B. K. Kellerman, E. Chason, S. T. Picraux… in MRS Online Proceedings Library (1993)

  17. No Access

    Article

    Energy Minimization During Epitaxial Grain Growth: Strain VS. Interfacial Energy

    We have investigated Epitaxial Grain Growth (EGG) in polycrystalline Ag films on Ni (001) substrates. EGG is driven by minimization of crystallographically anisotropic free energies such as the film/substrate ...

    J. A. Floro, R. Carel, C. V. Thompson in MRS Online Proceedings Library (1993)

  18. No Access

    Article

    Epitaxial Grain Growth and Orientation Metastability in Heteroepitaxial Thin Films

    Conventional heteroepitaxial thin film growth may result in a film whose epitaxial orientation is metastable. One method of probing the relative energies of various film orientations is epitaxial grain growth....

    J. A. Floro, C. V. Thompson in MRS Online Proceedings Library (1990)