57 Result(s)

Article

Excitonic Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Al_xGa_1-xAs Alloys

We report measurements of both the diamagnetic shifts and the linewidths of excitonic transitions in Al_xGa_1-xAs alloys as a function of Al concentration and magnetic field at 1.4 K using photoluminescence spectro...

G. Coli, K. K. Bajaj, J. L. Reno, E. D. Jones in MRS Online Proceedings Library (2011)

Article

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (≈ 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor dep...

Steven R. Kurtz, A. A. Allerman, J. F. Klem, R. M. Sieg… in MRS Online Proceedings Library (2011)

Article

Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys

We have measured the diamagnetic shifts and photoluminescence linewidths of excitonic transitions in ordered and disordered In_0.48 Ga_0.52 P alloys, lattice matched to GaAs, in pulsed magnetic fields at 4 and 76K....

E. D. Jones, K. K. Bajaj, G. Coli, S. A. Crooker… in MRS Online Proceedings Library (2011)

Article

Successes and Predictions of A Pseudopotential Approach in Anion-Mixed Nitrides

The construction and the parameters of a new-strain dependent empirical pseudopotentials method are described and provided, respectively. This method is shown to reproduce with a very high accuracy some observ...

L. Bellaiche, A. Al-Yacoub, N. A. Modine, E. D. Jones in MRS Online Proceedings Library (2011)

Article

Low Temperature Photoluminescence Studies of Narrow Bandgap Gaassbn Quantum Wells on GaAs

We present low-temperature (T = 4K) photoluminescence studies of the effect of adding nitrogen to 6-nm-wide single-strained GaAsSb quantum wells on GaAs. The samples were grown by both MBE and MOCVD tech-nique...

K. E. Waldrip, E. D. Jones, N. A. Modine, F. Jalali… in MRS Online Proceedings Library (2003)

Article

The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition

We describe the metal-organic chemical vapor deposition (MOCVD) growth of InAsSb/InAs and GaAsSb/GaAs(P) multiple quantum well (MQW) and InAsSb/InAsP and InAsSb/InPSb strained-layer superlattice (SLS) active r...

R. M. Biefeld, A. A. Allerman, S. R. Kurtz… in Journal of Materials Science: Materials in… (2002)

Article

Time-Resolved Photoluminescence Studies of In_xGa_1−xAs_1−yN_y

Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in In_xGa_1−xAs_1−yN_y (x ∼ 0.03, y ∼ 0.01) epilayers grown on GaAs by metalorganic chemical vapor deposition. Time-res...

M. Smith, R. A. Mair, J. Y. Lin, H. X. Jiang, E. D. Jones… in MRS Online Proceedings Library (2000)

Article

Solution of a Relativistic Three-Body Problem

 Starting from a relativistic s -wave scattering-length model for the two-particle input we construct an unambiguous, unitary solution of the relativistic three-body problem given only the masses m _...

H. P. Noyes, E. D. Jones in Few-Body Systems (1999)

Article

Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP is examined. The use of x-ray diffraction, TEM, AFM, and STEM to characterize the modulations is discussed. C...

D. M. Follstaedt, S. R. Lee, J. L. Reno, E. D. Jones… in MRS Online Proceedings Library (1999)

Article

The Nature and Origin of Lateral Composition Modulations in Short-Period Strained-Layer Superlattices

The nature and origin of lateral composition modulations in (AlAs)_m(InAs)_n short-period strained-layer superlattices grown by molecular beam epitaxy on InP substrates have been investigated by x-ray diffraction, ...

A.G. Norman, S.P. Ahrenkiel, H.R. Moutinho, C. Ballif… in MRS Online Proceedings Library (1999)

Article

Deep Level Defect Studies in Mocvd-Grown In_xGa_1−sAs_1−yN_y Films Lattice-Matched to GaAs

Deep level defects in MOCVD-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs were investigated using deep level transient spectroscopy (DLTS) measurements. As-grown p-InGaAsN showed broad...

Daewon Kwon, R. J. Kaplar, J. J. Boeckl, S. A. Ringel… in MRS Online Proceedings Library (1998)

Article

Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching

The crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1×1022 cm-3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In this investigati...

J. C. Clark, E. D. Jones, P. Capper… in Journal of Materials Science: Materials in… (1998)

Article

Diffusion of phosphorus in CdTe

The diffusion of phosphorus in CdTe was measured as a function of anneal time and temperature in the temperature range 600–900°C. The diffusion anneals were carried out in evacuated silica capsules mainly with...

E. Hoonnivathana, E. D. Jones, I. V. F. Viney… in Journal of Electronic Materials (1998)

Article

Diffusion of mercury into for Hg_xCd_(1−x)Te 0≤x≤0.03

Experiments carried out to fabricate Hg_xCd_(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into...

M. U AHMED, E. D JONES, J. B MULLIN… in Journal of Materials Science: Materials i… (1997)

Article

Spontaneous lateral composition modulation in AlAs/InAs short period superlattices via the growth front

The spontaneous formation of lateral composition modulation in AlAs/lnAs short period superlattices on InP (001) substrates has been investigated. Transmission electron microscopy and x-ray diffraction recipro...

J. Mirecki Millunchick, R. D. Twesten, S. R Lee… in Journal of Electronic Materials (1997)

Article

Spontaneous Lateral Composition Modulation in III–V Semiconductor Alloys

J. Mirecki Millunchick, R. D. Twesten, S. R. Lee, D. M. Follstaedt… in MRS Bulletin (1997)

Article

Surface cracking in Zinc diffused CdTe

CdTe slices have been diffused in sealed silica capsules under conditions of saturated vapor pressure due to zinc in the temperature range 390–950°C. All slices annealed with zinc at temperatures above 450°C d...

J. C. Clark, E. D. Jones, J. B. Mullin, A. W. Brinkman in Journal of Electronic Materials (1997)

Article

Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films

We have performed an extensive study of GaAs, Al_0.22Ga_0.78As, and In_0.16Ga_0.84As grown using tertiarybutylarsine (TBA) in an ultra-high purity metalorganic chemical vapor deposition multi-wafer reactor. Key resul...

H. C. Chui, R. M. Biefeld, B. E. Hammons, W. G. Breiland… in Journal of Electronic Materials (1997)

Article

Microstructure of Compositionally Modulated InAlAs

We have observed spontaneous, lateral composition modulation in tensile InAlAs alloy films grown as short-period superlattices on InP (001). We have analyzed these films using transmission electron microscopy,...

R. D. Twesten, J. Mirecki Millunchick, S. P. Ahrenkielt… in MRS Online Proceedings Library (1996)

Article

Comparison of the diffusion of Hg into CdTe and Hg_0.8Cd_0.2Te

In this paper, results published recently on Hg diffusion in the important infrared detector material, Hg_0.8Cd_0.2Te, and its common substrate material, CdTe, are compared and discussed. As is customary with diffu...

M. U. Ahmed, E. D. Jones, J. B. Mullin, N. M. Stewart in Journal of Electronic Materials (1996)