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Article
Growth and Optical Properties of 2D Photonic Crystals Based on Hexagonal GaAs/AlGaAs Pillar Arrays by Selective-Area Metalorganic Vapor Phase Epitaxy
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar arrays using selective area (SA) metalorganic vapor phase epitaxy (MOVPE) for the application of two-dimensional photonic cryst...
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Article
Quantum dots fabricated by selective area MOVPE and their application to single electron devices
A novel method of formation of uniform GaAs quantum dot (QD) structures, using selective area metalorganic vapour phase epitaxy (SA-MOVPE), and their application to single electron transistors (SETs) are demon...
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Chapter and Conference Paper
Fabrication of N-AlGaAs/GaAs Edge Quantum Wires on (118)B Facets with Gate-Electrode and Density Modulation of One-Dimensional Electrons
An N-AlGaAs/GaAs edge quantum wire (EQWI) structure with an effective width of 80–90 nm has been successfully prepared on a patterned substrate by an ensemble of several unique techniques in molecular beam epi...
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Chapter
Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures
Atomic-scale understanding and controllability of heterointerfaces in MBE-grown quantum wells and other microstructures are reviewed mainly on the basis of our systematic study using the mobility, photolumines...
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Article
High Resolution Transmission Electron Microscopy of GaAs/AlAs Hetero-Structures in the <110> Projection
High resolution transmission electron microscopy (HRTEM) of GaAs/AlAs hetero-structures grown by molecular beam epitaxy (MBE) is carried out in the <110> projection. It is shown that GaAs and AlAs are distingu...