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  1. No Access

    Article

    Pre-harvest weed map** of Cirsium arvense in wheat and barley with off-the-shelf UAVs

    The paper describes a procedure to detect green weeds in pre-harvest cereals using images from off-the-shelf UAVs with RGB cameras. All images used to develop and test the detection procedure were from fields ...

    J. Rasmussen, J. Nielsen, J. C. Streibig, J. E. Jensen… in Precision Agriculture (2019)

  2. Article

    Open Access

    A longitudinal pilot proton MRS investigation of the manic and euthymic states of bipolar disorder

    Several lines of evidence implicate dysfunction in brain energy production as a key component of bipolar disorder. In particular, elevated brain lactate levels observed in this condition suggest a shift from a...

    R O Brady Jr, A Cooper, J E Jensen, N Tandon, B Cohen… in Translational Psychiatry (2012)

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  3. No Access

    Article

    An Initial Investigation of Nitrogen Do** of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

    An initial investigation of the use of atomic nitrogen for controlled p-type do** of wide-bandgap Hg0.3Cd0.7Te (x = 0.7) is reported. Mixtures of argon and nitrogen, ranging in nitrogen concentration from 0.1% ...

    T.J. de Lyon, R.D. Rajavel, A.T. Hunter, J.E. Jensen… in Journal of Electronic Materials (2008)

  4. No Access

    Article

    Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

    High-performance 20-µm unit-cell two-color detectors using an n-p+-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with mi...

    E. P. G. Smith, E. A. Patten, P. M. Goetz, G. M. Venzor… in Journal of Electronic Materials (2006)

  5. No Access

    Article

    Optical limiting with higher fullerenes

    Optical limiting has been investigated for higher fullerenes and compared with C60. The transmission through an aperture placed after solutions of C76, C78, and C84 in tetrahydronaphthalene was measured using Q-s...

    A. R. KOST, J. E. JENSEN, R. O. LOUFTY, J. C. WITHER in Applied Physics B (2005)

  6. No Access

    Article

    Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

    For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems’ architecture for integrated, dual-band detectors uses the sequential mode of the n-p+-n configuration. There is a single indium b...

    R. A. Coussa, A. M. Gallagher, K. Kosai, L. T. Pham… in Journal of Electronic Materials (2004)

  7. No Access

    Article

    HgCdTe/Si materials for long wavelength infrared detectors

    The heteroepitaxial growth of HgCdTe on large-area Si substrates is an enabling technology leading to the production of low-cost, large-format infrared focal plane arrays (FPAs). This approach will allow HgCdT...

    S. M. Johnson, A. A. Buell, M. F. Vilela, J. M. Peterson… in Journal of Electronic Materials (2004)

  8. No Access

    Article

    Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance

    The flexible nature of molecular-beam epitaxy (MBE) growth is beneficial for HgCdTe infrared-detector design and allows for tailored growths at lower costs and larger focal-plane array (FPA) formats. Control o...

    A. A. Buell, L. T. Pham, M. D. Newton, G. M. Venzor… in Journal of Electronic Materials (2004)

  9. No Access

    Article

    HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

    Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared star...

    E. P. G. Smith, L. T. Pham, G. M. Venzor, E. M. Norton… in Journal of Electronic Materials (2004)

  10. No Access

    Article

    HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures

    The application of spectroscopic ellipsometry (SE) for real-time composition determination during molecular beam epitaxy (MBE) growth of Hg1−xCdxTe alloys with x>0.5 is reported. Techniques previously developed f...

    T. J. De Lyon, G. L. Olson, J. A. Roth, J. E. Jensen… in Journal of Electronic Materials (2002)

  11. No Access

    Article

    Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

    Results are reported on the molecular-beam epitaxial (MBE) growth and electrical performance of HgCdTe midwave-infrared (MWIR) detector structures. These devices are designed for operation in the 140–160 K tem...

    T. J. De Lyon, J. E. Jensen, I. Kasai, G. M. Venzor… in Journal of Electronic Materials (2002)

  12. No Access

    Article

    Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

    We have developed the capability to grow HgCdTe mid-wave infrared radiation double-layer heterojunctions (MWIR DLHJs) on 4″ Si wafers by molecular beam epitaxy (MBE), and fabricate devices from these wafers th...

    J. B. Varesi, R. E. Bornfreund, A. C. Childs… in Journal of Electronic Materials (2001)

  13. No Access

    Article

    MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

    HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100 mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The s...

    K. D. Maranowski, J. M. Peterson, S. M. Johnson… in Journal of Electronic Materials (2001)

  14. No Access

    Article

    HgCdZnTe quaternary materials for lattice-matched two-color detectors

    As the number of bands and the complexity of HgCdTe multicolor structures increases, it is desirable to minimize the lattice mismatch at growth interfaces within the device structure in order to reduce or elim...

    S. M. Johnson, J. L. Johnson, W. J. Hamilton… in Journal of Electronic Materials (2000)

  15. No Access

    Article

    MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

    We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution...

    T. J. de Lyon, J. E. Jensen, M. D. Gorwitz… in Journal of Electronic Materials (1999)

  16. No Access

    Article

    Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE

    We describe an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux during molecular beam epitaxial growth of HgCdTe e...

    G. L. Olson, J. A. Roth, P. D. Brewer, R. D. Rajavel… in Journal of Electronic Materials (1999)

  17. No Access

    Article

    Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors

    Molecular beam epitaxy was employed for the growth of HgCdTe-based n-p+-n device structures on (211)B oriented CdZnTe substrates. The device structures were processed as mesa isolated diodes, and operated as back...

    R. D. Rajavel, D. M. Jamba, J. E. Jensen, O. K. Wu… in Journal of Electronic Materials (1998)

  18. No Access

    Article

    Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

    Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. T...

    T. J. de Lyon, R. D. Rajavel, J. A. Vigil, J. E. Jensen… in Journal of Electronic Materials (1998)

  19. No Access

    Article

    Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures

    Next-generation HgCdTe infrared detectors and detector arrays require the growth of multilayer heterojunction structures with precisely controlled alloy composition and do** levels and minimal defect densiti...

    J. E. Jensen, J. A. Roth, P. D. Brewer, G. L. Olson… in Journal of Electronic Materials (1998)

  20. No Access

    Article

    Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

    The first report of molecular beam epitaxial growth and performance of HgCdTe two-color detectors for the simultaneous detection of radiation at 4.1 and 4.5 μm is presented. In-situ doped devices with the n-p-...

    R. D. Rajavel, D. M. Jamba, J. E. Jensen, O. K. Wu… in Journal of Electronic Materials (1997)

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