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31 Result(s)
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Article
A 40 μW–30 mW generated power, 280 Ω–1.68 kΩ load resistance CMOS controllable constant-power source for thermally-based sensor applications
A controllable constant-power source in 0.35 μm CMOS technology is presented in this paper. It is based on the resistive mirror method, and suitable for thermally-based sensor applications. Two versions have b...
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Article
1.3 V supply voltage, high bandwidth, 100 nA minimum amplitude BiCMOS voltage-controlled current source
A voltage-controlled current source in 0.35 μm BiCMOS technology is presented. A linear relationship between the control voltage and the output current is achieved by using first generation current conveyors i...
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Chapter
SiGe Photodetectors
SiGe alloys allow the integration of infrared detectors on Si. The addition of Ge to Si also increases the absorption coefficient in the spectral range from 400–1000 nm, allows a reduction of the detector thic...
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Chapter
Detectors in Thin Crystalline Silicon Films
Photodiodes in thin Silicon-on-Insulator (SOI) films represent a possibility to avoid slow carrier diffusion for achieving high-speed operation. CMOS circuits in Silicon-on-Sapphire (SOS) thin films allow easy...
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Chapter
Circuits for Electronic-Photonic Integration
In this chapter newest research on three-dimensional integration is described. Three promising methods for 3D integration of using copper micro pillars, interwafer connects, and through-silicon vias are introd...
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Chapter
Integrated Silicon Photodetectors
In this chapter the bipolar, CMOS, and BiCMOS process technologies are described. Photodetectors which are produced in these technologies without process modifications and their properties are introduced. Furt...
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Chapter
Examples of Optoelectronic Integrated Circuits
In this chapter the full variety of silicon receiver OEICs in digital and analog techniques will be introduced. Examples of optical receivers range from low-power synchronous digital circuits for massively par...
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Chapter
Basics and Theory
Optical absorption is a fundamental process which is exploited when optical energy is converted into electrical energy. Optoelectronic receivers are based on this energy conversion process. Photodetectors conv...
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Chapter
Design of Integrated Optical Receiver Circuits
Most of the optoelectronic integrated circuits (OEICs) described in this book are analog circuits. We, therefore, will restrict ourselves to the design of analog integrated circuits. The exclusion of the desig...
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Book
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Chapter
Introduction
In this introduction the motivation for investigating deep-sub-micron and nanometer CMOS comparators in detail is described. Furthermore, comparators are classified and different types of analog continuous-tim...
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Chapter
State of the Art
Although there are many papers on comparators in micron and submicron CMOS technology, in the following only deep-submicron and nanometer comparators are summarized.
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Chapter
Nanometer CMOS Technology
In this chapter the CMOS technologies used for design and fabrication of comparator test chips described in this book are introduced. The MOS transistor characteristics in nanometer CMOS are shown.
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Chapter
Conclusion and Comparison
A key element in an ADC is the comparator. It compares an input signal with a reference voltage and has as a result a logic stage, which indicates whether the signal is lower or higher.
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Chapter
Measurement Circuits and Setup
In this chapter circuits being necessary on chip to be able to measure the performance of the investigated comparators are described. First a buffer with a very low input capacitance and a 50 $$\Om...
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Chapter
Comparators in 65 nm CMOS
Two comparators in 65 nm low-power CMOS are introduced in this chapter. First a high-speed comparator for a sample rate of 7 GHz inclusive measured results is presented. The second comparator is optimized with...
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Chapter
Fundamentals of Clocked, Regenerative Comparators
The fastest ADC structure is the flash ADC, where in principle for a resolution of \(N\) N bits ...
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Chapter
Comparators in 120 nm CMOS
This chapter presents five comparators in 120 nm CMOS technology. Circuit details and measurement results are described for each of them. Starting from 1.5 GHz decision rate the performance is improved up to 6...
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Article
CMOS integrated MPP tracker with analog power measurement at the PV converter input
An integrated converter controller with maximum power point (MPP) regulation in 0.35 μm CMOS for photovoltaic (PV) applications is reported. The implemented MPP tracker bases on a perturb and observe algorithm...
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Article
A 10 Gb/s 0.25 μm SiGe modulator driver for photonic-integration
A 10 Gb/s modulator driver in SiGe 0.25 μm BiCMOS technology with a chip area of only 0.54 mm2 is presented. The intentions of designing this modulator driver are to amplify small incoming data signals at 10 Gb/s...
