7 Result(s)
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Chapter
SiGe Photodetectors
SiGe alloys allow the integration of infrared detectors on Si. The addition of Ge to Si also increases the absorption coefficient in the spectral range from 400–1000 nm, allows a reduction of the detector thic...
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Chapter
Detectors in Thin Crystalline Silicon Films
Photodiodes in thin Silicon-on-Insulator (SOI) films represent a possibility to avoid slow carrier diffusion for achieving high-speed operation. CMOS circuits in Silicon-on-Sapphire (SOS) thin films allow easy...
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Chapter
Circuits for Electronic-Photonic Integration
In this chapter newest research on three-dimensional integration is described. Three promising methods for 3D integration of using copper micro pillars, interwafer connects, and through-silicon vias are introd...
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Chapter
Integrated Silicon Photodetectors
In this chapter the bipolar, CMOS, and BiCMOS process technologies are described. Photodetectors which are produced in these technologies without process modifications and their properties are introduced. Furt...
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Chapter
Examples of Optoelectronic Integrated Circuits
In this chapter the full variety of silicon receiver OEICs in digital and analog techniques will be introduced. Examples of optical receivers range from low-power synchronous digital circuits for massively par...
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Chapter
Basics and Theory
Optical absorption is a fundamental process which is exploited when optical energy is converted into electrical energy. Optoelectronic receivers are based on this energy conversion process. Photodetectors conv...
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Chapter
Design of Integrated Optical Receiver Circuits
Most of the optoelectronic integrated circuits (OEICs) described in this book are analog circuits. We, therefore, will restrict ourselves to the design of analog integrated circuits. The exclusion of the desig...
