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  1. No Access

    Article

    Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

    III-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velo...

    Edward Yi Chang, Hai-Dang Trinh, Yueh-Chin Lin… in MRS Online Proceedings Library (2013)

  2. No Access

    Article

    Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures

    The electrical properties of Al2O3/n-InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage (C–V) frequency...

    Hai-Dang Trinh, Yueh-Chin Lin, Chien-I Kuo… in Journal of Electronic Materials (2013)

  3. No Access

    Article

    Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for differen...

    Yuen-Yee Wong, Wei-Ching Huang, Hai-Dang Trinh… in Journal of Electronic Materials (2012)