Skip to main content

2 Result(s)

within Chien-I Kuo Remove this filter

and

  1. No Access

    Article

    Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures

    The electrical properties of Al2O3/n-InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage (C–V) frequency...

    Hai-Dang Trinh, Yueh-Chin Lin, Chien-I Kuo… in Journal of Electronic Materials (2013)

  2. No Access

    Article

    An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers

    An AlGaAs/InGaAs HEMT grown on Si substrate with Ge/GexSi1−x buffer is demonstrated. The Ge/GexSi1−x metamorphic buffer layer used in this structure was only 1.0 μgm thick. The electron mobility in the In0.18Ga0....

    Edward Yi Chang, Yueh-Chin Lin, Yu-Lin Hsiao, Y. C. Hsieh… in MRS Online Proceedings Library (2008)