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Article
Open AccessWear behavior of copper material removal during fluid jet polishing: A comparative study between experiment and simulation
As a crucial part in micro-electromechanical manufacture, local ultra-precision processing of highly ductile copper is expected to be realized by fluid jet polishing (FJP), which widely utilized in optical ele...
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Article
Particles Manipulation to Improve Removal Efficiency of Fused Silica in Chemical Mechanical Polishing
SiO2 based slurry was an ideal solution for addressing element pollution in fused silica polishing. However, it was still a huge challenge to enhance polishing efficiency. Herein, lignin was added into colloidal ...
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Article
Open AccessAtomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing
Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanori...
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Article
Open AccessMechanical model of nanoparticles for material removal in chemical mechanical polishing process
Chemical mechanical polishing (CMP) is the most effective method for surface planarization in the semiconductor industry. Nanoparticles are significant for material removal and ultra-smooth surface formation. ...
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Article
AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP)
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studied through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. XPS results...
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Article
The Assessment of Interface Adhesion of Cu/Ta/Black Diamond™/Si Films Stack Structure by Nanoindentation and Nanoscratch Tests
The interface adhesion of the Cu/Ta/Black Diamond™ (SiOC:H, BD, low-k)/Si substrate films stack structure was investigated. During the nanoindentation tests, a series of indentations under varied maximum normal l...
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Article
Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
Due to its high mechanical hardness and excellent chemical inertness, SiC single-crystal wafer is extremely difficult to realize effectively removed total planarization. Owing to crystalline polarity and aniso...
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Article
A comparative study between graphene oxide and diamond nanoparticles as water-based lubricating additives
The tribological properties of graphene oxide (GO) nanosheets and modified diamond (MD) nanoparticles with excellent water-solubility were investigated. GO nanosheets were synthesized using carbon fibers with ...
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Article
Modification on the tribological properties of ceramics lubricated by water using fullerenol as a lubricating additive
It is necessary to modify the running-in process for the application of ceramics using water as a lubricant in real conditions because ceramics sliding in water are characterized by a running-in period with se...
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Article
Film Thickness of Ionic Liquids Under High Contact Pressures as a Function of Alkyl Chain Length
Ionic liquids are generally considered as environmentally friendly material. The film thicknesses of ionic liquids and silicone oils at high pressures up to 3 GPa are measured employing the relative optical in...
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Chapter and Conference Paper
Effect of Ingredients in Slurry Containing Alumina on Polishing of Hard Disk Substrate
Large Material Remove Rate (MRR) and high surface quality have to be achieved at the same time in the primary polishing of hard disk substrate. Alumina abrasive, with a high hardness, is widely used to meet th...
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Chapter and Conference Paper
Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry
Chemical-mechanical planarization (CMP) of copper is a committed step hi the IC manufacturing. In this work, the slimy including ethylenediamine and hydrogen peroxide was studied. Result showed that the materi...
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Chapter and Conference Paper
Experimental Study of Ultrasonic Vibration Assisted Chemical Mechanical Polishing for Sapphire Substrate
Sapphire is an important substrate material widely used in a range of applications such as optics, electrics, and IC industry. In many of those applications, critical surface quality demands of sapphire are re...
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Chapter and Conference Paper
Particles Detection and Analysis of Hard Disk Substrate after Post-CMP Cleaning
Scrub, ultrasonic and megasonic are widely used in industry as post-CMP cleaning procedure. In this paper, experiments are taken to analyze the particle contaminations after each process. A scatter spot method...
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Chapter and Conference Paper
Mechanism and Applications of Chemical and Mechanical Polishing
The mechanism of chemical mechanical polishing (CMP) is so complicated because there is synergy between chemical and mechanical action. We studied the effect of particels in CMP by MD simulation theoreticaly a...
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Article
Progress in material removal mechanisms of surface polishing with ultra precision
Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation o...
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Article
Structural and mechanical properties of nano-crystal TiN coatings
The structural and mechanical properties of TiN coatings prepared by ion beam assisted deposition (IBAD) were studied. The coatings have a polycrystal structure with grain size of ≈10nm or less. The hardness o...