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  1. No Access

    Article

    Optical Investigations of AlGaN on GaN Epitaxial Films

    We have investigated AlxGal-xN/GaN heterostructures (0<x<0.22) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodo-luminescence experiments. The energetic pos...

    G. Steude, T. Christmann, B. K. Meyer, A. Goeldner… in MRS Online Proceedings Library (2011)

  2. Article

    Optical Investigations of AlGaN on GaN Epitaxial Films

    We have investigated AlxGa1−xN /GaN heterostructures (0<x<0.22) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodo-luminescence experiments. The energetic po...

    G. Steude, T. Christmann, B.K. Meyer… in MRS Internet Journal of Nitride Semiconduc… (1999)

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    Article

    Residual Impurities and Transport Properties of High Purity Movpe Gaas

    High purity GaAs grown by metal organic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas has been studied by optically detected cyclotron resonance (ODCR) at microwave and far infrared frequencies. ...

    G. Steude, D. M. Hofmann, M. Drechsler, B. K. Meyer… in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    2.2 eV Luminescence in GaN

    The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation methode on 6H-SiC substrates. The photoluminescence and...

    D. M. Hofinann, D. Kovalev, G. Steude, D. Volm… in MRS Online Proceedings Library (1995)