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  1. Article

    Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

    Epitaxial layers of GaN on c-plane sapphire are analyzed by continuous-wave and time-resolved photoluminescence at 4K and by X-ray diffraction. Besides the well-known emissions from hexagonal GaN we observe lu...

    U. Strauss, H. Tews, H. Riechert… in MRS Internet Journal of Nitride Semiconduc… (1996)

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    Photoluminescence Excitation Studies of the Optical Transitions in GaN

    We present a detailed photoluminescence excitation study of the optical transitions in GaN. This technique is employed to distinguish between band-to-band excitation and exciton contribution to the formation o...

    D. Kovalev, B. Averboukh, B. K. Meyer, D. Volm, H. Amano… in MRS Online Proceedings Library (1996)

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    Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

    Free and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photolumine...

    B. K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst… in MRS Online Proceedings Library (1995)

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    Conductivity Measurements on GaN Grown by OMVPE and HVPE

    We report on conductance and cyclotron resonance (CR) experiments on GaN epitaxial films grown by the OMVPE and HVPE techniques. From a precise determination of the electron effective mass the donor binding en...

    M. Ben-Chorin, J. Diener, B.K. Meyer, M. Drechsler… in MRS Online Proceedings Library (1995)

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    2.2 eV Luminescence in GaN

    The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation methode on 6H-SiC substrates. The photoluminescence and...

    D. M. Hofinann, D. Kovalev, G. Steude, D. Volm… in MRS Online Proceedings Library (1995)

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    High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

    Using methyltrichlorosilane diluted with hydrogen and a modified temperature program during the initial stage of the deposition we have improved the deposition process and obtained high quality heteroepitaxial...

    S. Vepřek, Th. Kunstamann, J. Hofmann, D. Volm, B. Meyer in MRS Online Proceedings Library (1995)

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    GaN On 6H-SiC - Structural and Optical Properties

    Recent progress in the growth of high quality 6H-SiC single crystals has led to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal ...

    C. Wetzel, D. Volm, B. K. Meyer, K. Pressel, S. Nilsson… in MRS Online Proceedings Library (1994)

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    Radiation Defects in SiC - Electron Irradiation With Different Energies

    Radiation defects in 6H SiC introduced by electron irradiation at energies of 400 keV and 1 MeV are studied by low-temperature photoluminescence and Zeeman spectroscopy. We observe a new two line spectrum at 2...

    D. Volm, B. K. Meyer, E. N. Mokhov, P. G. Baranov in MRS Online Proceedings Library (1994)