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  1. No Access

    Article

    Twins and grain growth during liquid-phase sintering of BaTiO3 ceramics

    G. Kästner, R. Wagner, G. Lacayo, V. Hilarius in Journal of Materials Science Letters (1989)

  2. No Access

    Article

    Configuration of ferroelectric domains in semiconducting BaTiO3 ceramics

    G. Kästner, V. Hilarius, R. Wagner, W. Bürger in Journal of Materials Science Letters (1989)

  3. No Access

    Article

    Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers

    We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafers (R-cut) were coated each with YBa \(_2\) ...

    P. Kopperschmidt, G. Kästner, D. Hesse, U.M. Gösele, M. Lorenz in Applied Physics A (1997)

  4. No Access

    Article

    Wafer bonding of gallium arsenide on sapphire

    ) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close...

    P. Kopperschmidt, G. Kästner, S. Senz, D. Hesse, U. Gösele in Applied Physics A (1997)

  5. No Access

    Article

    A model of strain relaxation in hetero-epitaxial films on compliant substrates

    these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic feature...

    G. Kästner, U. Gösele, T.Y. Tan in Applied Physics A (1998)

  6. No Access

    Article

    Microstructure of YBCO and YBCO/SrTiO3/YBCO* PLD Thin Films on Sapphire for Microwave Applications

    A large-area pulsed laser deposition process for high-quality YBa2Cu3O7−δ (YBCO) thin films on both sides of R-plane sapphire substrates with CeO2 buffer layer is used routinely to optimize planar microwave filte...

    M. Lorenz, H. Hochmuth, D. Natusch, T. Thärigen… in MRS Online Proceedings Library (1999)

  7. No Access

    Article

    Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres

    Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...

    G. Kästner, T. Akatsu, S. Senz, A. Plössl, U. Gösele in Applied Physics A (2000)

  8. No Access

    Article

    Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas

    A technique of direct bonding wafers up to 6-inch diameter without mechanical load after being heated to elevated temperatures in H2 or in non-flammable forming gas (5% H2/95% N2) was applied to GaAs and GaAs/GaP...

    G. Kästner, O. Breitenstein, R. Scholz… in Journal of Materials Science: Materials in… (2002)