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within G. Kästner Remove this filter Condensed Matter Physics Remove this filter Manufacturing, Machines, Tools, Processes Remove this filter Nanotechnology Remove this filter

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  1. No Access

    Article

    Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers

    We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafers (R-cut) were coated each with YBa \(_2\) ...

    P. Kopperschmidt, G. Kästner, D. Hesse, U.M. Gösele, M. Lorenz in Applied Physics A (1997)

  2. No Access

    Article

    Wafer bonding of gallium arsenide on sapphire

    ) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close...

    P. Kopperschmidt, G. Kästner, S. Senz, D. Hesse, U. Gösele in Applied Physics A (1997)

  3. No Access

    Article

    A model of strain relaxation in hetero-epitaxial films on compliant substrates

    these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic feature...

    G. Kästner, U. Gösele, T.Y. Tan in Applied Physics A (1998)

  4. No Access

    Article

    Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres

    Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...

    G. Kästner, T. Akatsu, S. Senz, A. Plössl, U. Gösele in Applied Physics A (2000)