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Article
Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres
Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...
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Article
A model of strain relaxation in hetero-epitaxial films on compliant substrates
these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic feature...
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Article
Wafer bonding of gallium arsenide on sapphire
) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close...
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Article
Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers
We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafers (R-cut) were coated each with YBa \(_2\) ...