21 Result(s)

Article

Semiconductor WGM lasers for the mid-IR spectral range

Disk-cavity whispering-gallery-mode (WGM) semiconductor lasers for the mid-IR spectral range have been developed. The specific properties of these devices are investigated.

V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova… in Semiconductors (2005)

Article

Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range

Electroluminescence from a quantum-cascade structure comprising 40 periods of GaAs/Al_0.15Ga_0.85As tunnel-coupled quantum wells (QW) was studied. A terahertz emission band in the range 1.0–1.8 THz is observed unde...

N. N. Zinov’ev, A. V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov… in Semiconductors (2002)

Article

Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures

Terahertz electroluminescence in the range ≈1.5 THz was observed in a quantum-cascade GaAs/AlGaAs structure containing 40 periods of tunnel-coupled wells. The luminescence is caused by the spatially indirect o...

N. N. Zinov’ev, A. V. Andrianov… in Journal of Experimental and Theoretical Ph… (2001)

Article

Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the center of a GaAs quantum well studied by magnetotunneling spectroscopy

We present an experimental study of electron wave functions in InAs/GaAs self-assembled quantum dots by magnetotunneling spectroscopy. The electronic wave functions have a biaxial symmetry in the growth plane,...

E. E. Vdovin, Yu. N. Khanin… in Journal of Experimental and Theoretical Ph… (2001)

Article

Observation of the interaction between Landau levels of different two-dimensional subbands in GaAs in a normal magnetic field

Tunnel current measurements between strongly disordered two-dimensional electron systems in a perpendicular magnetic field are presented. Two-dimensional electron accumulation layers are formed by an extremely...

D. Yu. Ivanov, E. Takhtamirov… in Journal of Experimental and Theoretical Ph… (2000)

Chapter

The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots

New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect,...

M. S. Skolnick, P. W. Fry, I. E. Itskevich… in Optical Properties of Semiconductor Nanost… (2000)

Chapter

Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structures

This paper reports: (1) the first observation of intersubband electroluminescence from a single period resonant tunnelling structure; and (2) the observation of intersubband electroluminescence from GaAs/AlGaAs-b...

Y. B. Li, J. W. Cockburn, M. S. Skolnick… in Intersubband Transitions in Quantum Wells:… (1998)

Chapter

Close Binary Stars (Étoiles Doubles Serrées)

The pervasive connection of Close Binary Stars (CBS) with essentially every fundamental field of astronomy and astrophysics has required a huge number of papers on many topics to be considered for this report....

M. Rodonò, E. F. Guinan, Y. Kondo, J. V. Clausen, H. Drechsel… in Reports on Astronomy (1997)

Chapter

Identification of Tunneling Mechanisms through GaAs/AlAs/GaAs Single Barrier Structires

We have identified the Γ-X and X-Γ intervalley tunneling mechanisms in GaAs/AlAs/GaAs single barrier p-i-n structures by employing electroluminescence and transfort techniques. We show that the Γ-X-Γ tunneling...

J.J Finley, R. J. Teissier, M. S. Skolnick… in Hot Carriers in Semiconductors (1996)

Chapter

Magnetic and Electric Field Effects in Semiconductor Quantum Microcavity Structures

The effects of magnetic and electric field on the vacuum Rabi exciton-photon coupling in semiconductor quantum microcavity structures are presented. A number of phenomena are described including marked increas...

T. A. Fisher, A. M. Afshar, D. M. Whittaker… in Microcavities and Photonic Bandgaps: Physi… (1996)

Article

Vacuum rabi splitting in semiconductor microcavities with applied electric and magnetic fields

We describe the use of measurements of vacuum Rabi splitting to extract values for the exciton oscillator strengths in In_0.13Ga_0.87As-GaAs and GaAs-Al_0.2Ga_0.8As quantum wells. By varying both field and temperatur...

D. M. Whittaker, T. A. Fisher, A. M. Afshar, M. S. Skolnick… in Il Nuovo Cimento D (1995)

Article

Book reviews

G. Hill, A. J. Seeds, C. C. Philips in Optical and Quantum Electronics (1995)

Chapter

Excited State Populations of the Quantum Wells of Double Barrier Resonant Tunneling Structures

The observation of electroluminescence recombination from electrons in both ground (El) and excited states (E2) of the quantum wells of double barrier resonant tunneling structures is reported. Analysis of the...

P.D. Buckle, J. W. Cockburn, M. S. Skolnick… in Optical Phenomena in Semiconductor Structu… (1993)

Chapter

Pressure Dependence of Negative Differential Resistance in AlGaAs/GaAs Double Barrier Resonant Tunnelling Devices up to 20 Kbar

We have investigated the pressure dependence of Negative Differential Resistance (NDR) features observed in the DC current-voltage (I-V) characteristics of Al_xGa_1-xAs/GaAs Double Barrier Resonant Tunnelling Devic...

D. G. Austing, P. C. Klipstein, A. W. Higgs… in Resonant Tunneling in Semiconductors (1991)

Chapter and Conference Paper

Resonant Magnetotransport in Short (0.25 – 9 μm) n⁺nn⁺ GaAs Structures

Magnetophonon resonance in thin (0.25 – 9 μm) n⁺nn⁺ GaAs structures is used to study quasi-elastic inter-Landau level scattering which is induced in the high electric fields (up to 20 kV/cm) achievable in structu...

P. S. S. Guimarães, L. Eaves, J. C. Portal… in Proceedings of the 17th International Conf… (1985)