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8 Result(s)

within F. Varniere Remove this filter Characterization and Evaluation of Materials Remove this filter

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  1. No Access

    Article

    Development of Al-based multilayer optics for EUV

    We report on the development of multilayer optics for the extreme ultra-violet (EUV) range. The optical performance of Al-based multilayer mirrors is discussed with regard to promising reflectivity and selecti...

    E. Meltchakov, C. Hecquet, M. Roulliay, S. De Rossi, Y. Menesguen… in Applied Physics A (2009)

  2. No Access

    Article

    Characterization and optimization of magnetron sputtered Sc/Si multilayers for extreme ultraviolet optics

    Scandium/silicon multilayers have been deposited by magnetron sputtering and characterized by several techniques. Experimental peak reflectances of 0.22 and 0.37 have been measured respectively at wavelengths ...

    J. Gautier, F. Delmotte, F. Bridou, M.F. Ravet, F. Varniere… in Applied Physics A (2007)

  3. No Access

    Article

    Optical and Electrical Characterizations of PZT Films with Different O/Pb Stoichiometry

    Thin films were deposited by radio frequency (rf) magnetron sputtering on Pt/TiN/Ti/SiO2/Si substrates starting from a ceramic Pb(Zr0.4Ti0.6)O3 or metallic Pb1.1(Zr0.4Ti0.6) target. To promote the ferroelectric p...

    M. C. Hugon, B. Ea Kim, F. Varniere, B. Agius… in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric PZT Films Deposited by RF Magnetron Sputtering

    The electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline Ru...

    B. Ea-Kim, F. Varniere, M. C. Hugon, B. Agius, R. Bisaro… in MRS Online Proceedings Library (1996)

  5. No Access

    Article

    Effects of Annealings on Pt/TiN/Ti Interfacial Reactions

    The selection of a suitable electrode and barrier layer is important in the integration of lead zirconate titanate (PZT) into memory circuits. Processing at elevated temperatures of up to 800°C can give rise t...

    F. Varniere, B. Ea Kim, B. Agius, R. Bisaro, J. Olivier… in MRS Online Proceedings Library (1994)

  6. No Access

    Article

    Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

    Due to their high dielectric constant, good chemical stability and good insulating properties, lead zirconate titanate (PZT) thin films are considered as promising materials to replace Si3N4 and Ta2O3 for use as ...

    B. Ea Kim, M. C. Hugon, F. Varniere, B. Agius, H. Achard… in MRS Online Proceedings Library (1994)

  7. No Access

    Article

    Physicochemical and Microstructural Characterization of Rf Sputtering Magnetron Pb(ZrTi)O3 Thin Films

    Lead zirconate titanate thin films were deposited on Pt/TiN/BPSG/Si structures by sputtering an oxide target of nominal composition (Pb(Zr0.55, Ti0.45)O3 or PZT) in argon plasma. The PZT films were deposited at d...

    F. Varniere, E. Cattan, B. Eakim, H. Achard, B. Agius in MRS Online Proceedings Library (1993)

  8. No Access

    Article

    Floating Temperature Deposition of Device Quality SiO2 Thin Films by DECR Plasma

    Low temperature deposition of dielectric thin films is more and more used in very large scale integrated (VLSI) circuits. For this purpose, distributed electron cyclotron resonance (DECR) plasma appears to be ...

    B. Agius, M. C. Hugon, N. Jiang, F. Varniere, F. Plais… in MRS Online Proceedings Library (1992)