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  1. No Access

    Article

    Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters

    The problem of residual strain in GaN epilayers is currently the attention of many studies, since it affects the optical and electrical properties of the epilayers. In order to discuss the origin of this resid...

    Y.-M. Le Vaillant, S. Ciur, A. Andenet, O. Briot, B. Gil… in MRS Online Proceedings Library (1997)

  2. No Access

    Article

    Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric PZT Films Deposited by RF Magnetron Sputtering

    The electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline Ru...

    B. Ea-Kim, F. Varniere, M. C. Hugon, B. Agius, R. Bisaro… in MRS Online Proceedings Library (1996)

  3. No Access

    Article

    Process-Induced Uniaxial Magnetic Anisotropy in Epitaxial Fe and Ni80Fe20 Films

    The occurrence of a weak in-plane uniaxial magnetic anisotropy in Fe thin films grown by molecular beam epitaxy onto (001)-oriented MgO substrates has been previously reported. We explain the occurrence of thi...

    J.R. Childress, O. Durand, F. Nguyen Van, P. Galtier… in MRS Online Proceedings Library (1995)

  4. No Access

    Article

    Effects of Annealings on Pt/TiN/Ti Interfacial Reactions

    The selection of a suitable electrode and barrier layer is important in the integration of lead zirconate titanate (PZT) into memory circuits. Processing at elevated temperatures of up to 800°C can give rise t...

    F. Varniere, B. Ea Kim, B. Agius, R. Bisaro, J. Olivier… in MRS Online Proceedings Library (1994)

  5. No Access

    Article

    Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth

    Conformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is...

    B. Gérard, D. Pribat, R. Bisaro, E. Costard, J. Nagle… in MRS Online Proceedings Library (1992)

  6. No Access

    Chapter

    MBE Growth of Magnetic Multilayers

    We present an original MBE chamber, especially conceived to study the growth of magnetic multilayers. We equipped this new chamber with in-situ analysis instruments such as quadrupole mass spectrometer, RHEED,...

    F. Nguyen van Dau, P. Etienne, R. Bisaro… in Physics, Fabrication, and Applications of … (1988)