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  1. No Access

    Article

    Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes

    In this letter the scalability of electrical properties of axial GaAs nanowire pn-diodes grown by Au-assisted metalorganic vapor-phase epitaxy is reported. The impact of the nanowire diameter on the forward curr...

    C. Gutsche, A. Lysov, I. Regolin, B. Münstermann… in Journal of Electronic Materials (2012)

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    Article

    High performance III/V RTD and PIN diode on a silicon (001) substrate

    We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and ...

    W. Prost, V. Khorenko, A.-C. Mofor, S. Neumann, A. Poloczek, A. Matiss… in Applied Physics A (2007)

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    Article

    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

    A frequency-dependent impedance analysis (0.1–50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mos...

    N. V. Alkeev, S. V. Averin, A. A. Dorofeev, P. Velling, E. Khorenko… in Semiconductors (2007)

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    Article

    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates

    We realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed ...

    P. Kopperschmidt, St. Senz, R. Scholz, G. Kastner… in MRS Online Proceedings Library (1998)

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    Article

    Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis

    Interface intermixing of highly strained heterostructures was investigated using high-resolution double-crystal X-ray diffractometry combined with computer simulations. A method of modelling imperfections in s...

    Q. Liu, W. Prost, A. Brennemann, U. Auer, F. J. Tegude in Il Nuovo Cimento D (1997)

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    Article

    Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP

    Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 1015 cm-3) In0.53Ga0.47As on SiO2-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy a...

    M. Schilling, G. Schemmel, F. J. Tegude in Journal of Electronic Materials (1986)

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    Chapter

    Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method

    Deep level measurements have been performed on three different types of sample: (l)Sn-doped layers diffused into SI-GaAs:Cr; (2) Sn-doped LPE-GaAs layers on SI-GaAs:Cr; and (3) Sn-doped layers diffused into hi...

    F. J. Tegude, K. Heime in Semi-Insulating III–V Materials (1980)

  8. No Access

    Article

    Nonlinear wave propagation along periodic-loaded transmission line

    A high frequency transmission line periodically loaded with varactor diodes is presented to study nonlinear wave propagation. The nonlinearity and dispersion characteristics are experimentally and theoreticall...

    D. Jäger, F. -J. Tegude in Applied physics (1978)