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Article
Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes
In this letter the scalability of electrical properties of axial GaAs nanowire pn-diodes grown by Au-assisted metalorganic vapor-phase epitaxy is reported. The impact of the nanowire diameter on the forward curr...
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Article
High performance III/V RTD and PIN diode on a silicon (001) substrate
We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and ...
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Article
Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
We realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed ...
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Article
Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP
Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 1015 cm-3) In0.53Ga0.47As on SiO2-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy a...
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Article
Nonlinear wave propagation along periodic-loaded transmission line
A high frequency transmission line periodically loaded with varactor diodes is presented to study nonlinear wave propagation. The nonlinearity and dispersion characteristics are experimentally and theoreticall...