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    Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a tempe...

    E. E. Rodyakina, S. V. Sitnikov, D. I. Rogilo, A. V. Latyshev in Russian Microelectronics (2018)