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  1. No Access

    Article

    A tool to draw chemical equilibrium diagrams using SIT: Applications to geochemical systems and radionuclide solubility

    A set of computer programs has been developed to draw chemical-equilibrium diagrams. This new software is the Java-language equivalent to the Medusa/Hydra software (developed some time ago in Visual basic at t...

    I. Puigdomènech, E. Colàs, M. Grivé, I. Campos, D. García in MRS Online Proceedings Library (2014)

  2. No Access

    Chapter

    Seeded Self-Ordering of Low-Dimensional Quantum Structures by Nonplanar Epitaxy

    The realization of low-dimensional quantum structures, particularly quantum wires (QWRs) and quantum dots (QDs), has attracted considerable attention due to their interesting physics and their potential role i...

    E. Kapon, G. Biasiol, D. M. Hwang, E. Colas in Low Dimensional Structures Prepared by Epi… (1995)

  3. No Access

    Chapter and Conference Paper

    Optical Properties of Quantum Wires Grown on Nonplanar Substrates

    The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 1...

    E. Kapon, M. Walther, J. Christen, M. Grundmann… in Low-Dimensional Electronic Systems (1992)

  4. No Access

    Article

    Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

    A variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organome...

    D. E. Aspnes, R. Bhat, E. Colas, L. T. Florez, S. Gregory… in MRS Online Proceedings Library (1991)

  5. No Access

    Article

    Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs

    Device quality GaAs was grown in a conventional Organometallic Chemical Vapor Deposition (OMCVD) reactor, using sequential group III and V reactant gas exposures typical of Atomic Layer Epitaxy (ALE). The impo...

    E. Colas, R. Bhat, G. C. Nihous in MRS Online Proceedings Library (1989)

  6. No Access

    Article

    Kinetic Limits to Growth on GaAs by OMCVD

    Using a real-time surface probe with 0.01 monolayer (ML) sensitivity, we determine the rate-limiting steps for atmospheric-pressure, alternating-layer-epitaxy OMCVD growth on (001) and (110) GaAs with trimethy...

    D. E. Aspnes, R. Bhat, E. Colas, M. A. Koza… in MRS Online Proceedings Library (1989)

  7. No Access

    Article

    Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces

    Reflectance-difference spectroscopy (RDS) is a recently developed optical technique that allows to monitor chemical and structural changes at a growing semiconductor surface, in-situ and in real-time. This tec...

    E. Colas, D. E. Aspnes, R. Bhat, A. A. Studna, M. A. Koza… in MRS Online Proceedings Library (1988)

  8. No Access

    Article

    Te Induced AlAs/GaAs Superlattice Mixing

    Te enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrati...

    P. Mel, S. A. Schwarz, T. Venkatesan, C. L. Schwartz… in MRS Online Proceedings Library (1988)