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  1. No Access

    Article

    A tool to draw chemical equilibrium diagrams using SIT: Applications to geochemical systems and radionuclide solubility

    A set of computer programs has been developed to draw chemical-equilibrium diagrams. This new software is the Java-language equivalent to the Medusa/Hydra software (developed some time ago in Visual basic at t...

    I. Puigdomènech, E. Colàs, M. Grivé, I. Campos, D. García in MRS Online Proceedings Library (2014)

  2. No Access

    Article

    Endometrial carcinoma: molecular alterations involved in tumor development and progression

    In the western world, endometrial carcinoma (EC) is the most common cancer of the female genital tract. The annual incidence has been estimated at 10–20 per 100 000 women. Two clinicopathological variants are ...

    A Yeramian, G Moreno-Bueno, X Dolcet, L Catasus, M Abal, E Colas, J Reventos… in Oncogene (2013)

  3. No Access

    Article

    ETV5 cooperates with LPP as a sensor of extracellular signals and promotes EMT in endometrial carcinomas

    Endometrial carcinoma (EC) is the most frequent among infiltrating tumors of the female genital tract, with myometrial invasion representing an increase in the rate of recurrences and a decrease in survival. W...

    E Colas, L Muinelo-Romay, L Alonso-Alconada, M Llaurado, M Monge, J Barbazan… in Oncogene (2012)

  4. No Access

    Article

    Molecular determinants of invasion in endometrial cancer

    Endometrial carcinoma is the most common gynaecological malignancy in the western world and the most frequent among infiltrating tumours of the female genital tract. Despite the characterisation of molecular e...

    M. Abal, M. Llauradó, A. Dolla, M. Monge, E. Colas… in Clinical and Translational Oncology (2007)

  5. No Access

    Chapter

    Seeded Self-Ordering of Low-Dimensional Quantum Structures by Nonplanar Epitaxy

    The realization of low-dimensional quantum structures, particularly quantum wires (QWRs) and quantum dots (QDs), has attracted considerable attention due to their interesting physics and their potential role i...

    E. Kapon, G. Biasiol, D. M. Hwang, E. Colas in Low Dimensional Structures Prepared by Epi… (1995)

  6. No Access

    Chapter

    Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates

    The excess carrier capture and stimulated emission processes in GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are discussed. These crescent shaped w...

    E. Kapon, M. Walther, D. M. Hwang, E. Colas… in Phonons in Semiconductor Nanostructures (1993)

  7. No Access

    Chapter

    Optical Spectroscopy of Quantum Wires and Dots

    Molecular beam epitaxy (MBE) has enabled the realization of two-dimensional (2D) structures with sharp interfaces and high electron mobilities producing much novel and unexpected physics. Recently, interest ha...

    A.S. Plaut, K. Kash, E. Kapon… in Optical Phenomena in Semiconductor Structu… (1993)

  8. No Access

    Chapter and Conference Paper

    Optical Properties of Quantum Wires Grown on Nonplanar Substrates

    The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 1...

    E. Kapon, M. Walther, J. Christen, M. Grundmann… in Low-Dimensional Electronic Systems (1992)

  9. No Access

    Article

    Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

    A variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organome...

    D. E. Aspnes, R. Bhat, E. Colas, L. T. Florez, S. Gregory… in MRS Online Proceedings Library (1991)

  10. No Access

    Chapter

    Hot Electron Transport in Superlattices

    We describe measurements of hot-electron dynamics in superlattices under flat band conditions and superlattices in a uniform electric field. Under flat band conditions we show that carriers in high-lying minib...

    P. England, J. R. Hayes, E. Colas, M. Helm in Resonant Tunneling in Semiconductors (1991)

  11. No Access

    Article

    Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs

    Device quality GaAs was grown in a conventional Organometallic Chemical Vapor Deposition (OMCVD) reactor, using sequential group III and V reactant gas exposures typical of Atomic Layer Epitaxy (ALE). The impo...

    E. Colas, R. Bhat, G. C. Nihous in MRS Online Proceedings Library (1989)

  12. No Access

    Article

    Kinetic Limits to Growth on GaAs by OMCVD

    Using a real-time surface probe with 0.01 monolayer (ML) sensitivity, we determine the rate-limiting steps for atmospheric-pressure, alternating-layer-epitaxy OMCVD growth on (001) and (110) GaAs with trimethy...

    D. E. Aspnes, R. Bhat, E. Colas, M. A. Koza… in MRS Online Proceedings Library (1989)

  13. No Access

    Article

    Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces

    Reflectance-difference spectroscopy (RDS) is a recently developed optical technique that allows to monitor chemical and structural changes at a growing semiconductor surface, in-situ and in real-time. This tec...

    E. Colas, D. E. Aspnes, R. Bhat, A. A. Studna, M. A. Koza… in MRS Online Proceedings Library (1988)

  14. No Access

    Article

    Te Induced AlAs/GaAs Superlattice Mixing

    Te enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrati...

    P. Mel, S. A. Schwarz, T. Venkatesan, C. L. Schwartz… in MRS Online Proceedings Library (1988)