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  1. No Access

    Article

    Characterization of High-k Dielectrics by Combined Spectroscopic Ellipsometry (SE) and X-Ray Reflectometry (XRR)

    At present, new high-k dielectric materials are being intensively investigated to replace the silicon dioxide as gate dielectric for the next generation of electronic devices. Several candidate materials (such...

    L. Sun, C. Defranoux, J. L. Stehle, P. Boher, P. Evrard… in MRS Online Proceedings Library (2004)

  2. No Access

    Article

    Optical characterization of oxynitride films in the visible-ultraviolet range

    Oxynitride optical properties in the visible-ultraviolet spectral range are very interesting, due to their use in electronic device manufacturing. This paper presents spectra of refractive index and extinction...

    A. Borghesi, E. Bellandi, G. Guizzetti, A. Sassella, S. Rojas… in Applied Physics A (1993)

  3. No Access

    Article

    Influence of annealing temperature on structural, electrical and optical properties of WSi2

    WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temp...

    M. Amiotti, E. Bellandi, A. Borghesi, A. Piaggi, G. Guizzetti, F. Nava… in Applied Physics A (1992)

  4. No Access

    Article

    Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

    The transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation ...

    R. Reitano, M. G. Grimaldi, P. Baeri, E. Bellandi… in MRS Online Proceedings Library (1991)