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  1. No Access

    Article

    Cascode turn-off of field-controlled integrated thyristors

    The residual voltage drop in the on state of an insulated-gate bipolar transistor, the basic device of today’s power electronics, is considerably higher than that of conventional thyristor-type devices, which ...

    I. V. Grekhov, A. V. Rozhkov, L. S. Kostina, N. F. Zitta… in Technical Physics (2010)

  2. No Access

    Article

    White electroluminescence from ZnO/GaN structures

    White electroluminescence (EL) from ZnO/GaN structures fabricated by pulsed laser deposition of ZnO:In onto GaN:Mg/GaN structures MOCVD-grown on Al2O3 substrates has been observed. The white light is produced by ...

    I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets… in Semiconductors (2007)

  3. No Access

    Article

    Auger spectroscopy and properties of Ir(Pt)/PZT(PZT/PT)/Ir nanosized thin-film structures

    Studies of the elemental distribution profiles through the thickness of thin-film ferroelectric capacitor structures using Auger spectroscopy made it possible to establish the relation between the elemental an...

    V. P. Afanas’ev, P. V. Afanas’ev, I. V. Grekhov… in Physics of the Solid State (2006)

  4. No Access

    Article

    Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

    A method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on th...

    L. A. Delimova, I. V. Grekhov, D. V. Mashovets… in MRS Online Proceedings Library (2006)

  5. No Access

    Article

    A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure

    The possibility of fabricating a ferroelectric FET based on a Pb(ZrxTi1−x )O3/SnO2 (PZT/SnO2) heterostructure is investigated. Sb-doped epitaxial SnO2/Al2O3 thin film deposited by YAG laser ablation from a metal ...

    I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova… in Semiconductors (2005)