Abstract
The carrier statistics in LED structures with ultrathin multilayer InGaN insertions in a GaN matrix was studied. The optical data obtained indicate that an array of quantum dots (QDs) is formed in these structures. The QDs are scattered in size, which leads to an inhomogeneous broadening of the energy spectrum of carriers localized in the QDs. It is shown that, despite the suppressed transport of carriers between QDs, carriers are distributed among the levels of the QD array quasi-statistically at temperatures of about room temperature and higher. This makes it possible to describe the carrier injection and recombination in the device structures studied in terms of quasi-Fermi levels for electrons and holes.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 492–496.
Original Russian Text Copyright © 2005 by D. Sizov, V. Sizov, Zavarin, Lundin, Fomin, Tsatsul’nikov, Ledentsov.
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Sizov, D.S., Sizov, V.S., Zavarin, E.E. et al. A study of carrier statistics in InGaN/Gan LED structures. Semiconductors 39, 467–471 (2005). https://doi.org/10.1134/1.1900264
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DOI: https://doi.org/10.1134/1.1900264