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6 Result(s)

within D. I. Proskurovsky Remove this filter Classical and Continuum Physics Remove this filter

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  1. No Access

    Article

    A mechanism of microcrater formation in metallic material irradiated by a low-energy high-current electron beam

    Experiments with stainless steel (304L grade) samples exposed to microsecond pulses of high-current low-energy (10–30 keV) electron beam have been performed to determine dependences of the morphology, average ...

    G. E. Ozur, D. I. Proskurovsky, V. P. Rotshtein in Technical Physics Letters (2016)

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    Article

    Behavior of prebreakdown emission centers with 200-kv 100-ns pulses applied to a vacuum gap

    Using an electron-transparent anode (titanium foil), the behavior of prebreakdown emission centers on a cathode made of 12X18H10T stainless steel is studied for the case of vacuum gap excitation by 100-ns-wide...

    E. V. Nefedtsev, S. A. Onishchenko, D. I. Proskurovsky, A. V. Batrakov in Technical Physics (2012)

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    Article

    Calculation of the parameters of a high-current reflective discharge with a hot cathode

    A physical model of a self-sustaining reflective discharge is formulated based on the continuity equation for the electron flux and the equation of energy balance on the hot cathode. The model allows one to ca...

    L. A. Zjulkova, A. V. Kozyrev, D. I. Proskurovsky in Technical Physics (2005)

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    Article

    High-current Penning discharge with self-heated cathode

    A theoretical model of self-sustained Penning (reflective) discharge is formulated based on the equation of continuity of the electron flow and the equation of energy balance on the cathode. Using the proposed...

    L. A. Zyul’kova, A. V. Kozyrev, D. I. Proskurovsky in Technical Physics Letters (2004)

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    Article

    Atomic hydrogen flux density measured using thin metal films

    Using one-or two-layer films of transition metals, it is possible to determine the atomic hydrogen flux density under reduced gas pressure conditions (10−1–10−3 Pa). The method consists in monitoring a change in ...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)

  6. No Access

    Article

    The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such s...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)