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  1. No Access

    Article

    Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns

    This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of e...

    G. E. Ozur, D. I. Proskurovsky in Plasma Physics Reports (2018)

  2. No Access

    Article

    A mechanism of microcrater formation in metallic material irradiated by a low-energy high-current electron beam

    Experiments with stainless steel (304L grade) samples exposed to microsecond pulses of high-current low-energy (10–30 keV) electron beam have been performed to determine dependences of the morphology, average ...

    G. E. Ozur, D. I. Proskurovsky, V. P. Rotshtein in Technical Physics Letters (2016)

  3. No Access

    Article

    Behavior of prebreakdown emission centers with 200-kv 100-ns pulses applied to a vacuum gap

    Using an electron-transparent anode (titanium foil), the behavior of prebreakdown emission centers on a cathode made of 12X18H10T stainless steel is studied for the case of vacuum gap excitation by 100-ns-wide...

    E. V. Nefedtsev, S. A. Onishchenko, D. I. Proskurovsky, A. V. Batrakov in Technical Physics (2012)

  4. No Access

    Article

    Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons

    The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si ...

    M. V. Zakharov, V. A. Kagadei, T. N. L’vova, E. V. Nefedtsev… in Semiconductors (2006)

  5. No Access

    Article

    A Wide-Aperture, Low-Energy, and High-Current Electron Beam Source with a Plasma Anode Based on a Reflective Discharge

    A source of low-energy (10–30 keV) high-current (up to 30-kA) electron beams efficiently and stably operating under conditions of oil-free vacuum has been developed. It is based on an electron gun with an expl...

    G. E. Ozur, D. I. Proskurovsky, K. V. Karlik in Instruments and Experimental Techniques (2005)

  6. No Access

    Article

    Calculation of the parameters of a high-current reflective discharge with a hot cathode

    A physical model of a self-sustaining reflective discharge is formulated based on the continuity equation for the electron flux and the equation of energy balance on the hot cathode. The model allows one to ca...

    L. A. Zjulkova, A. V. Kozyrev, D. I. Proskurovsky in Technical Physics (2005)

  7. No Access

    Article

    High-current Penning discharge with self-heated cathode

    A theoretical model of self-sustained Penning (reflective) discharge is formulated based on the equation of continuity of the electron flow and the equation of energy balance on the cathode. Using the proposed...

    L. A. Zyul’kova, A. V. Kozyrev, D. I. Proskurovsky in Technical Physics Letters (2004)

  8. No Access

    Article

    Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

    Methods of nuclear reactions, x-ray diffraction analysis, transmission electron and nuclear microscopy were used to investigate the mechanism of hydrogenation of thin vanadium films in their treatment in a flo...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Russian Physics Journal (2003)

  9. No Access

    Article

    Atomic hydrogen flux density measured using thin metal films

    Using one-or two-layer films of transition metals, it is possible to determine the atomic hydrogen flux density under reduced gas pressure conditions (10−1–10−3 Pa). The method consists in monitoring a change in ...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)

  10. No Access

    Article

    The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such s...

    V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky… in Technical Physics Letters (2003)

  11. No Access

    Article

    Formation of Accelerated Electron Flows under the Conditions of a Pulsed Low-Current Vacuum Discharge

    It is well known that a vacuum arc discharge operating at nearly threshold currents is unstable and features short-time (10–7–10–8 s) voltage and current bursts. We were the first to detect under these conditions...

    A. V. Batrakov, S. A. Popov, D. I. Proskurovsky in Russian Physics Journal (2000)

  12. No Access

    Article

    Production of GexSi1-x, and SiC Films on Si Substrates Using Particle-Beam Technologies

    The paper presents the results of preliminary experiments on the production of GexSi1-x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealin...

    V. A. Kagadey, O. B. Ladizhensky, N. I. Lebedeva… in MRS Online Proceedings Library (1992)

  13. No Access

    Article

    The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing

    The paper presents the results of a comprehensive study of the outdif-fusion of volatile impurities (P, As, Sb) from originally amorphous ion-implanted layers (IILs) of Si at rapid electron-beam heating in vac...

    V. A. Kagadey, N. I. Lebedeva, D. I. Proskurovsky… in MRS Online Proceedings Library (1992)