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  1. No Access

    Article

    Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

    We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, ele...

    A. I. Baranov, A. V. Uvarov, A. A. Maksimova… in Technical Physics Letters (2023)

  2. No Access

    Article

    Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice

    The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecula...

    A. V. Babichev, E. V. Pirogov, M. S. Sobolev, D. V. Denisov… in Semiconductors (2023)

  3. No Access

    Article

    Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition

    Investigations of atomic-layer deposition of GaP layers on Si substrates with different orientations and with different preliminary surface treatment have been carried out. The deposition of GaP was carried ou...

    A. V. Uvarov, V. A. Sharov, D. A. Kudryashov, A. S. Gudovskikh in Semiconductors (2023)

  4. Article

    Open Access

    Erratum to: Several Articles in JETP Letters

    An Erratum to this paper has been published: https://doi.org/10.1134/S0021364022340045

    S. V. Sazonova, E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova… in JETP Letters (2022)

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  5. Article

    Open Access

    Resonant Hybrid Metal–Dielectric Nanostructures for Local Color Generation

    Here, we experimentally and theoretically demonstrate a laser-induced change in local color based on the resha** of gold–silicon asymmetric nanostructures. The evolution of scattering properties enabled by l...

    E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova, P. N. Kustov… in JETP Letters (2022)

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  6. No Access

    Article

    Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching

    This letter consider arrays of vertically oriented silicon wires obtained by cryogenic dry etching of silicon substrates with a free electron density of n = 1016 and 1017 cm–3, a height of 6 µm, and a diameter of...

    A. I. Baranov, D. A. Kudryashov, A. V. Uvarov, I. A. Morozov… in Technical Physics Letters (2022)

  7. No Access

    Article

    Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction

    The possibility of using admittance spectroscopy to characterize the quality of ITO/MoOx/n-Si structures is shown. It has been demonstrated that magnetron evaporation of ITO layer at room temperature leads to the...

    A. I. Baranov, D. A. Kudryashov, A. V. Uvarov, I. A. Morozov… in Technical Physics Letters (2021)

  8. No Access

    Article

    Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD

    The possibility of creating a lower junction for the multijunction A3B5/Si-type solar cells based on the n-GaP/p-Si heterostructure grown by the combined method of plasma enhanced atomic-layer deposition and meta...

    A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova… in Technical Physics Letters (2021)

  9. No Access

    Article

    Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films

    The influence of the relative position of a magnetron and substrate on the electrical and optical properties of a forming indium–tin oxide (ITO) layer is shown. The reasons for this behavior are considered and...

    D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov… in Semiconductors (2021)

  10. No Access

    Article

    A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

    It is shown for the first time that thin boron phosphide (BP) layers on silicon substrates can be formed by low-temperature plasma-enhanced atomic layer deposition at 250°C. Experiments demonstrated the possib...

    A. S. Gudovskikh, D. A. Kudryashov, A. I. Baranov… in Technical Physics Letters (2021)

  11. No Access

    Article

    Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon

    It is shown that the degree of damage of the near-surface layer of p-silicon can be estimated with the aid of a MoOx/p-Si selective contact, the current–voltage characteristics of which are highly sensitive to st...

    D. A. Kudryashov, A. S. Gudovskikh, A. A. Maksimova… in Technical Physics Letters (2020)

  12. No Access

    Article

    Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition

    The effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the s...

    A. V. Uvarov, K. S. Zelentsov, A. S. Gudovskikh in Semiconductors (2019)

  13. No Access

    Article

    Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices

    The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchan...

    D. A. Kudryashov, A. S. Gudovskikh, A. I. Baranov in Semiconductors (2018)

  14. No Access

    Article

    Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization

    Copper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at ...

    V. F. Agekyan, E. V. Borisov, A. S. Gudovskikh, D. A. Kudryashov… in Semiconductors (2018)

  15. No Access

    Article

    Visualization of Isofrequency Contours of Strongly Localized Waveguide Modes in Planar Dielectric Structures

    An experimental method has been proposed to study the dispersion properties of optical surface and waveguide modes in planar structures. An experimental setup involves a microscope with a high numerical apertu...

    D. V. Permyakov, I. S. Sinev, S. K. Sychev, A. S. Gudovskikh… in JETP Letters (2018)

  16. No Access

    Article

    Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies

    Nanoscale copper (I) oxide layers are formed by magnetron-assisted sputtering onto glassy and silicon substrates in an oxygen-free environment at room temperature, and the structural and optical properties of ...

    D. A. Kudryashov, A. S. Gudovskikh, A. V. Babichev, A. V. Filimonov… in Semiconductors (2017)

  17. No Access

    Article

    Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

    The results of simulation by the transfer-matrix method of TiO2/SiO2 double-layer and TiO2/Si3N4/SiO2 triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented...

    S. B. Musalinov, A. P. Anzulevich, I. V. Bychkov, A. S. Gudovskikh… in Semiconductors (2017)

  18. No Access

    Article

    Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

    Using methods of numerical simulation, the modes of operation are considered and structures are determined for solar cells of combined dimension based on a planar GaPNAs/Si heterostructure and an array of GaN ...

    A. M. Mozharov, D. A. Kudryashov, A. D. Bolshakov, G. E. Cirlin… in Semiconductors (2016)

  19. No Access

    Article

    GaAs/InGaAsN heterostructures for multi-junction solar cells

    Solar-cell heterostructures based on GaAs/InGaAsN materials with an InAs/GaAsN superlattice, grown by molecular beam epitaxy, are studied. A p-GaAs/i-(InAs/GaAsN)/n-GaAs p–i–n test solar cell with a 0.9-μm-thick ...

    E. V. Nikitina, A. S. Gudovskikh, A. A. Lazarenko, E. V. Pirogov… in Semiconductors (2016)

  20. No Access

    Article

    Simulation of characteristics of double-junction solar cells based on ZnSiP2 heterostructures on silicon substrate

    Design and operation modes of double-junction monolithic lattice-matched solar cells based on the ZnSiP2/Si system of materials have been calculated. The effect of the photoactive region thickness and minority ca...

    D. A. Kudryashov, A. S. Gudovskikh, A. M. Mozharov… in Technical Physics Letters (2015)

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