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  1. No Access

    Article

    Femtosecond optical response of low temperature grown In0.53Ga0.47As

    A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In0.53Ga0.47As samples. Low temperature mole...

    B. C. Tousley, S. M. Mehta, A. I. Lobad, P. J. Rodney… in Journal of Electronic Materials (1993)

  2. No Access

    Article

    The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

    The presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjecte...

    P. M. Fauchet, G. W. Wicks, Y. Kostoulas, A. I. Lobad… in MRS Online Proceedings Library (1995)

  3. No Access

    Chapter

    Hot Carrier Thermalization Dynamics in Low-Temperature-Grown III-V Semiconductors

    The presence of point defects is expected to influence the properties of free carriers in semiconductors. Low-temperature-grown (LT) GaAs is a material with a high density of point defects and a unique combina...

    A. I. Lobad, Y. Kostoulas, G. W. Wicks, P. M. Fauchet in Hot Carriers in Semiconductors (1996)

  4. No Access

    Chapter and Conference Paper

    Ultrafast THz conductivity dynamics: spinlattice relaxation in colossal magnetoresistive oxides

    Ultrafast measurements of optically induced changes in the conductivity (0.4-1.0 THz) of La0.7M0.3MnO3 films (M = Ca, Sr) from -10K to -0.9Tc reveal a spin-lattice relaxation that follows the temperature dependen...

    R. D. Averitt, A. I. Lobad, C. Kwon, S. A. Trugman… in Ultrafast Phenomena XII (2001)