Abstract
The presence of point defects is expected to influence the properties of free carriers in semiconductors. Low-temperature-grown (LT) GaAs is a material with a high density of point defects and a unique combination of properties: sub(picosecond) mobile carrier lifetime, good carrier mobility and very high dark resistivity.1 The ultrashort mobile carrier lifetime in LT GaAs and other III-Vs has been extensively investigated by many groups and found to be due to trap**.2–6 The purpose of the present paper is to report results on the ultrafast thermalization dynamics of hot carriers in LT grown III-Vs.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
F.W. Smith, Mat. Res. Soc. Symp. Proc. 241, 3 (1992).
Y. Kostoulas et al, in Ultrafast Phenomena in Semiconductors, SPIE 2142, 100 (1994).
E.S. Harmon et al, Appi. Phys. Lett. 63, 2248 (1993).
B.C. Tousley et al, J. of Electronic Materials 22, 1477 (1993).
S. Gupta et al, J. of Electronic Materials 22, 1449 (1993).
Y. Kostoulas et al, Appi. Phys. Lett. 66, 1821 (1995).
Y. Kostoulas et al, submitted for publication.
J. Shah, IEEE J. of Quantum Electronics 24, 276 (1988).
T. Gong et al, Phys. Rev. B 44, 6542 (1991).
P.M. Fauchet et al, J. Non-Cryst. Solids 141, 76 (1992).
D. Hulin et al, J. Non-Cryst. Solids 137&138, 527 (1991).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Plenum Press, New York
About this chapter
Cite this chapter
Lobad, A.I., Kostoulas, Y., Wicks, G.W., Fauchet, P.M. (1996). Hot Carrier Thermalization Dynamics in Low-Temperature-Grown III-V Semiconductors. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_23
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0401-2_23
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-8035-1
Online ISBN: 978-1-4613-0401-2
eBook Packages: Springer Book Archive