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    Article

    Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction

    Abstract—The impact of transverse optical confinement on the static and spectral characteristics of 1.55 μm vertical-cavity surface-emitting lasers (WF-VCSEL) with a buried tunnel junction (BTJ) n++-InGaAs/p++-In...

    S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, N. A. Maleev in Technical Physics Letters (2023)

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    Article

    Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer

    Abstract—The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero magnetic field optically pumped atomic magnetometers...

    M. A. Bobrov, S. A. Blokhin, N. A. Maleev, A. G. Kuzmenkov in Technical Physics Letters (2023)

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    Article

    Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

    An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114–170 and 210–1100 nm ranges. It has been demonst...

    P. N. Aruev, V. P. Belik, A. A. Blokhin, V. V. Zabrodskii in Technical Physics Letters (2023)

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    Article

    Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes

    Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter...

    N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev in Technical Physics Letters (2023)

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    Article

    Peculiarities of Growth of InAs Quantum Dot Arrays with Low Surface Density by Molecular Beam Epitaxy

    The influence of the substrate temperature and the flux of In adatoms on the structural and optical characteristics of InAs quantum dots with a low surface density is experimentally studied. An increase in the...

    S. A. Blokhin, A. P. Vasyl’ev, A. M. Nadtochy, N. D. Prasolov in Technical Physics Letters (2023)

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    Article

    Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction

    Abstract—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam...

    S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, N. A. Maleev in Technical Physics Letters (2023)

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    Article

    Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers

    X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular b...

    S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky in Technical Physics (2023)

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    Article

    Post-Growth Technology of Multi-Junction Photovoltaic Converters Based on A3B5 Heterostructures

    Investigation and development of the post-growth technology for fabricating multi-junction photovoltaic converters based on GaInP/GaInAs/Ge heterostructure has been carried out. Antireflection coating, ohmic c...

    A. V. Malevskaya, N. D. Il’inskaya, Yu. M. Zadiranov, A. A. Blokhin in Technical Physics (2023)

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    Article

    The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

    Using mathematical simulation methods, various versions of the design of electrically-driven single photon sources based on optical microcavities with single quantum dots are investigated. A version of the des...

    S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin in Technical Physics Letters (2021)

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    Article

    The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

    An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained ...

    S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. P. Vasil’ev in Technical Physics Letters (2020)

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    Article

    A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

    A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP...

    S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin in Technical Physics Letters (2020)

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    Article

    Studying the Formation of Antireflection Coatings on Multijunction Solar Cells

    The formation of antireflection coating on multijunction solar cells based on A3B5 semiconductor heterostructures has been studied at the stage of structure surface processing by methods of plasmachemical, wet ch...

    A. V. Malevskaya, Yu. M. Zadiranov, A. A. Blokhin in Technical Physics Letters (2019)

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    Article

    A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm

    Vertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum γ factor (λ/2 design) and suppression of opti...

    N. N. Ledentsov, V. A. Shchukin, V. P. Kalosha in Technical Physics Letters (2018)

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    Article

    The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

    The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For lo...

    S. A. Blokhin, M. A. Bobrov, A. G. Kuz’menkov, A. A. Blokhin in Technical Physics Letters (2018)

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    Article

    A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range

    Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting l...

    S. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, A. A. Blokhin in Technical Physics Letters (2016)

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    Article

    Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pum**

    The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is inves...

    S. A. Blokhin, N. V. Kryzhanovskaya, E. I. Moiseev in Technical Physics Letters (2016)

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    Article

    The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

    Sulfide passivation has been used to reduce the surface nonradiative recombination rate in micro- disk mesas based on (AlGaIn)As/GaAS heterostructures the active region of which is constituted either by ten Ga...

    N. V. Kryzhanovskaya, M. V. Lebedev, T. V. L’vova in Technical Physics Letters (2015)

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    Article

    Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators

    We have studied the possibility of determining the actual thicknesses and compositions of separate layers in AlGaAs heterostructures with vertical-cavity optical microresonators by the combined use of optical ...

    S. A. Blokhin, A. G. Kuz’menkov, A. G. Gladyshev in Technical Physics Letters (2014)