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4 Result(s)

within A J Papworth Remove this filter Materials Science, general Remove this filter

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  1. No Access

    Chapter and Conference Paper

    Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra

    The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...

    A M Sánchez, M H Gass, A J Papworth, R Beanland… in Microscopy of Semiconducting Materials (2005)

  2. No Access

    Chapter and Conference Paper

    Map** of the effective electron mass in III–V semiconductors

    The effective mass in semiconductors is related to the mobility of charge carriers as well as the density of states. As electron mobility inherently influences semiconductor device performance, knowledge of th...

    M H Gass, A M Sanchez, A J Papworth, T J Bullough… in Microscopy of Semiconducting Materials (2005)

  3. No Access

    Chapter and Conference Paper

    Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure

    We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...

    R Beanland, A M Sánchez, A J Papworth, M H Gass… in Microscopy of Semiconducting Materials (2005)

  4. No Access

    Article

    High density net shape components by direct laser re-melting of single-phase powders

    Direct Metal Laser Re-Melting is a variant of the Selective Laser Sintering process, a Rapid Prototy** (RP) technology. This tool-less manufacturing technology has the potential of producing complex, high qu...

    R. H. Morgan, A. J. Papworth, C. Sutcliffe, P. Fox… in Journal of Materials Science (2002)