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Batch fabrication of MoS2 devices directly on growth substrates by step engineering
Monolayer molybdenum disulfide (MoS2) has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness, dangling-bond-free flat surf...
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Article
Regulating electronic structure of porous nickel nitride nanosheet arrays by cerium do** for energy-saving hydrogen production coupling hydrazine oxidation
Water electrolysis for energy-efficient H2 production coupled with hydrazine oxidation reaction (HzOR) is prevailing, while the sluggish electrocatalysts are strongly hindering its scalable application. Herein, w...
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Article
Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses
Photodetectors and optoelectronic synapses are vital for construction of artificial visual perception system. However, the hardware implementations of optoelectronic-neuromorphic devices based on conventional ...
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Article
Monolayer MoS2 epitaxy
As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoel...
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Article
Electronic structure of exfoliated millimeter-sized monolayer WSe2 on silicon wafer
The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among ...
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Article
Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations
The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the i...
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Article
Bandgap broadening at grain boundaries in single-layer MoS2
Two-dimensional semiconducting transition-metal dichalcogenides have attracted considerable interest owing to their unique physical properties and future device applications. In particular, grain boundaries (G...
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Article
Fabrication of high-quality all-graphene devices with low contact resistances
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic et...
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Article
Vapour-phase graphene epitaxy at low temperatures
We report an epitaxial growth of graphene, including homo- and hetero-epitaxy on graphite and SiC substrates, at a temperature as low as ∼540 °C. This vapour-phase epitaxial growth, carried out in a remote pla...
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Article
Studies of graphene-based nanoelectromechanical switches
Electromechanical switch devices employing suspended graphene as movable elements have been developed. Their on and off states can be controlled by modulating the electrostatic force applied to the graphene. T...
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Article
Catalyst-free growth of nanographene films on various substrates
We have developed a new method to grow uniform graphene films directly on various substrates, such as insulators, semiconductors, and even metals, without using any catalyst. The growth was carried out using a...