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    Influence of Cadmium Vapor Pressure on the Diffusion of Indium in CdTe

    The influence of cadmium vapor pressure on the diffusion of indium in p-type CdTe was studied in the range 700–1000°C (the cadmium source temperature was TCd = 1000–600°C). It was found that there was an anomalou...

    L. V. Maslova, O. A. Matveev, Yu. V. Rud’… in Physics of p-n Junctions and Semiconductor… (1971)