Abstract
The influence of cadmium vapor pressure on the diffusion of indium in p-type CdTe was studied in the range 700–1000°C (the cadmium source temperature was TCd = 1000–600°C). It was found that there was an anomalous increase in the rate of diffusion at temperatures TCd ⋝ 650°C. At TCd < 650°C, the diffusion rate could be explained quantitatively using a published account of diffusion through the cadmium sublattice. At cadmium source-temperatures TCd ⋝ 650°C, a different mechanism of diffusion became predominant.
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Maslova, L.V., Matveev, O.A., Rud’, Y.V., Sanin, A.K.V. (1971). Influence of Cadmium Vapor Pressure on the Diffusion of Indium in CdTe. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_48
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_48
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