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Article
Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors
A mathematical model of thermally stimulated heterovalent substitution of anions in the III–V surface region in the course of chalcogenide passivation from the gaseous phase is substantiated and formulated. Th...
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Article
The initial stage of the gallium selenide-gallium arsenide structure formation by heterovalent substitution of selenium for arsenic
The initial stage of Ga2Se3-GaAs heterostructure formation by heterovalent substitution of selenium for arsenic in the solid state was studied by methods of scanning tunneling microscopy, electron microscopy, opt...
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Article
Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures
The dependence of the electron drift mobility in the undepleted conduction channels of Ga2Se3/GaAs heterostructures on the surface charge density is measured. The presence of charge coupling in the accumulation l...