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  1. No Access

    Article

    Initiation of Pharmacotherapy as a Risk Factor of Falling in Older Patients

    The paper presents literary and original data on the problems of falling for elderly patients. The relationship between the occurrence of a fall and the initiation of drug therapy with a known negative effect ...

    E. S. Ilina, O. T. Bogova, S. V. Gorbatenko, O. V. Golovina… in Advances in Gerontology (2020)

  2. No Access

    Article

    Optical and electrical properties of GaN: Si-based microstructures with a wide range of do** levels

    The optical and electrical properties of silicon-doped epitaxial gallium nitride layers grown on sapphire have been studied. The studies have been performed over a wide range of silicon concentrations on each ...

    V. F. Agekyan, E. V. Borisov, L. E. Vorobjev, G. A. Melentyev… in Physics of the Solid State (2015)

  3. No Access

    Article

    Lateral photoconductivity in structures with Ge/Si quantum dots

    The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent ...

    V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov… in Semiconductors (2013)

  4. No Access

    Article

    Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

    Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N D — N ...

    V. F. Agekyan, L. E. Vorob’ev, G. A. Melentyev, H. Nykänen… in Physics of the Solid State (2013)

  5. No Access

    Article

    Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

    The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot f...

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, V. Yu. Panevin… in Semiconductors (2012)

  6. No Access

    Article

    Current-induced spin polarization of holes in tellurium

    The current-induced optical activity in a tellurium single crystal has been experimentally investigated in the mid-infrared spectral region. The phenomenological theory of the current-induced optical activity ...

    V. A. Shalygin, A. N. Sofronov, L. E. Vorob’ev… in Physics of the Solid State (2012)

  7. No Access

    Article

    Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field

    The emission of terahertz radiation from a AlGaN/GaN heterostructure under the heating of two-dimensional electrons in a lateral electric field is studied. The field dependence of the temperature of hot electr...

    V. A. Shalygin, L. E. Vorobjev, D. A. Firsov… in Bulletin of the Russian Academy of Science… (2012)

  8. No Access

    Article

    Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

    Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown ...

    D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentyev… in Semiconductors (2010)

  9. No Access

    Article

    Absorption and modulation of absorption in p-GaAs/AlGaAs quantum well nanostructures

    Optical phenomena in GaAs/AlGaAs quantum well nanostructures doped with acceptors were studied in the mid-IR spectral range. Equilibrium abso rption spectra were measured in a wide temperature range. Modulatio...

    D. A. Firsov, L. E. Vorob’ev, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2010)

  10. No Access

    Article

    Emission of terahertz radiation from GaN under impact ionization of donors in an electric field

    The emission of terahertz radiation from epitaxial n-GaN layers in lateral electric field was found and studied for the first time. Radiation emission was observed in fields exceeding the impurity breakdown thres...

    V. A. Shalygin, L. E. Vorob’ev, D. A. Firsov… in Bulletin of the Russian Academy of Science… (2010)

  11. No Access

    Article

    Multifunction metal-semiconductor nanocomposites

    The basic properties of metal-semiconductor nanocomposites were investigated using InN/In with In clusters as an example. Inconsistencies in the characteristic energies of optical processes occurring in these ...

    T. V. Shubina, V. N. Jmerik, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2010)

  12. No Access

    Article

    Hot charge-carrier electroluminescence from laser nanostructures in the spontaneous and stimulated emission modes and absorption of IR radiation by hot electrons in quantum wells

    Charge-carrier heating and the carrier concentration dependence on electric current in quantum-well laser heterostructures have been studied under conditions of spontaneous and stimulated emission. Intersubban...

    L. E. Vorobjev, V. L. Zerova, D. A. Firsov… in Bulletin of the Russian Academy of Science… (2009)

  13. No Access

    Article

    Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field

    Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with loca...

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2008)

  14. No Access

    Article

    Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

    Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related...

    D. A. Firsov, L. E. Vorobjev, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2008)

  15. No Access

    Article

    Spin photocurrents and the circular photon drag effect in (110)-grown quantum well structures

    The study of spin photocurrents in (110)-grown quantum well structures is reported. The investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The ...

    V. A. Shalygin, H. Diehl, Ch. Hoffmann, S. N. Danilov, T. Herrle… in JETP Letters (2007)

  16. No Access

    Article

    Impurity breakdown and electroluminescence in the terahertz range in p-GaAs and p-GaAsN microstructures

    The current-voltage characteristics of strained GaAsN:Be layers have been studied under the conditions of hop** conductivity and impurity breakdown, and the electroluminescence of these layers has been measu...

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin, V. Yu. Panevin… in Technical Physics Letters (2006)

  17. No Access

    Article

    Removal of tritium from vacuum oil by isotopic exchange

    Experimental data on the removal of tritium, by isotopic exchange, from VM-5 vacuum oil are presented. It is shown that the most efficient method of extracting tritium from oil is contact with concentrated sul...

    É. P. Magomedbekov, V. A. Shalygin, O. A. Baranova, M. Yu. Isaeva… in Atomic Energy (2005)

  18. No Access

    Article

    Intersubband absorption of light in heterostructures with double tunnel-coupled GaAs/AlGaAs quantum wells

    Intersubband absorption of mid-IR light was studied in heterostructures with asymmetrical tunnel-coupled quantum wells in equilibrium conditions and under high-power pum** by picosecond pulses of light. The ...

    L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov… in Semiconductors (2005)

  19. No Access

    Article

    Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

    Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron an...

    L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov… in Semiconductors (2005)

  20. No Access

    Article

    The engineering and properties of InAs quantum dot molecules in a GaAs matrix

    Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by tran...

    Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov… in Semiconductors (2005)

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