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Article
The Dynamics of Core and Outer Micro-turbulence During the L–I–H Confinement Transition on the EAST Superconducting Tokamak
The dynamics of the core and outer micro-turbulence during the low–intermediate–high (L–I–H) confinement transition have been investigated simultaneously by a tangential CO2 laser collective scattering system on ...
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Article
The Dynamics of Short-Scale Turbulent Fluctuations During The H–L Back Transition in The EAST Superconducting Tokamak
The dynamics of the turbulent fluctuations during the H–L back transition have been studied on EAST by a CO2 laser collective scattering system. The limit-cycle oscillation (LCO) regime has been frequently observ...
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Article
Monitoring System of EAST’s Nuclear Radiation
Neutron and Gamma detectors have been used to monitor the nuclear radiation in the environment (Jian** in Nucl Electron Detect Technol 19(1), 1999; Chai et al. in Nucl Electron Detect Technol 25(1), 2005), duri...
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Article
Suppression of MHD activity with limiter biasing in the HT-7 tokamak
We report here the first preliminary results of our limiter biasing experiments performed in the HT-7 tokamak. For this study, a limiter biasing system was designed, constructed and installed on the HT-7 tokam...
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Article
Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...
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Article
Correlation between green luminescence and morphology evolution of ZnO films
Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...
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Article
MOCVD growth and properties of ZnO films using dimethylzinc and oxygen
The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...
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Article
Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...
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Article
Realization of silicon quantum wires by selective chemical etching and thermal oxidation
Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scan...