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Article
Effect of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO films
The combined effects of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential sub...
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Article
Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p–n homojunction structure
Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to...
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Article
Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control
Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quant...
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Article
Controlled formation of oxide shells from GaN nanowires: Poly- to single-crystal
One-dimensional nanocable heterostructures consisting of GaN nanowire cores and Ga2O3 shells were prepared by thermal oxidation of single-crystal GaN nanowires in an oxygen atmosphere. Morphologically uniform GaN...
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Article
Effect of reaction temperature and time during two-step selenization and sulfurization of Se-Coated CuGa/In precursors
In this work, the selenization of Mo/CuGa/In/Se (Se layer thickness: 1 μm) precursors followed by sulfurization was investigated. Particular emphasis was placed on the effect of the variation of the selenization ...