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within Optical and Electronic Materials Remove this filter I. P. Nikitina Remove this filter Article Remove this filter

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  1. No Access

    Article

    Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

    We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC...

    S. V. Rendakova, I. P. Nikitina, A. S. Tregubova… in Journal of Electronic Materials (1998)

  2. No Access

    Article

    GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

    6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epi...

    A. E. Nikolaev, S. V. Rendakova, I. P. Nikitina… in Journal of Electronic Materials (1998)