8 Result(s)
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Article
Physical Properties of Bulk GaN Crystals Grown by HVPE
Free standing GaN platelets were fabricated by hydride vapor phase epitaxy (HVPE). The platelets having a current maximum size of 7×6×0.1 mm3 were obtained by HVPE growth of ~100 µm thick GaN layers on SiC substr...
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Article
GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...
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Article
GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...
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Article
Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC...
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Article
GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epi...
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Article
AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
GaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/mi...
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Article
GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films...
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Article
Fabrication of GaN mesa structures
We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10-5 Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10
