Abstract
The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated in the GaAs/Al0.30Ga0.70As structures with different compositions of the quantum well (QW) layers covered of QDs: GaAs or Al0.10Ga0.75In0.15As. The heat treatments of the QD structures were carried out at 640°C or 710°C for 2 h in an argon atmosphere. To estimate the compositions of QDs and cap** QWs, photoluminescence (PL) and high-resolution X-ray diffraction have been applied. The QD structure with the Al0.1Ga0.75In0.15As cap** QWs has been characterized by a lower energy of the ground state emission (≈ 1.30 µm, 300°K), its highest intensity and the smaller full width at half maximum, compared to the QD structure with GaAs cap** QWs. The extinction of the integrated PL intensity about 80 times was detected in the range 10–400 K for the QD structure with Al0.10Ga0.75In0.15As cap** compared to this extinction more than 1000 times detected in the QD structure with GaAs cap**. The advantages obtained in the QD structure with Al0.1Ga0.75In0.15As cap** are attributed to the lower mismatch and stresses at the cap** QW/InAs QD interfaces, as well as the higher chemical binding energy of the Al-As bonds, compared to their value for Ga-As, which decreases the interdiffusion efficiency of the Ga/In atoms.
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Acknowledgments
The authors appreciate the financial support of the CONACYT Mexico (pt. 258224), SIP-IPN, Mexico (pt. 20210400), and thank the Dr. A Stintz in the Center of high technology materials (CHTM) at the University of New Mexico, Albuquerque, NM, for the growth of studied QD structures.
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The authors declare and confirm that they have not any conflict of interests: no financial/personal interest or belief that could affect their objectivity. The author Tetyana Torchynska has received the research grant from the CONACYT Mexico (No. 258224) and SIP-IPN, Mexico (No. 20210400).
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Torchynska, T.V., Tamayo, R.C., Polupan, G. et al. Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Cap** Layers. Journal of Elec Materi 50, 4633–4641 (2021). https://doi.org/10.1007/s11664-021-09007-2
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DOI: https://doi.org/10.1007/s11664-021-09007-2