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Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

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Abstract

GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs) and with variable In compositions in cap** InxGa1−xAs layers (0.10 ≤ x ≤ 0.25) have been studied by means of photoluminescence, X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. InxGa1−xAs composition varying is accompanied by changing no monotonically the PL spectrum parameters of InAs QDs and by decreasing the InAs QD sizes. XRD and HR-XRD studies permit to control the InGaAs layer compositions and elastic strains in QWs. The analysis of HR-XRD results has shown that the level of elastic strain varies no monotonically in studied QD structures as well. The physical reasons of mentioned optical and structural effects and their dependences on cap** layer compositions have been discussed.

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Acknowledgements

The work was supported by CONACYT Mexico (project 258224) and by SIP-IPN, Mexico (projects 20160285 and 20160360). The authors to thank the Dr. A. Stintz from Center of High Technology Materials at University of New Mexico, Albuquerque, USA for growing studied QD structures.

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Authors and Affiliations

  1. ESIME– Instituto Politécnico Nacional, Mexico, 07738, D. F., Mexico

    L. G. Vega-Macotela & G. Polupan

  2. ESFM– Instituto Politécnico Nacional, Mexico, 07738, D. F., Mexico

    T. V. Torchynska

Authors
  1. L. G. Vega-Macotela
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  2. T. V. Torchynska
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  3. G. Polupan
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Correspondence to L. G. Vega-Macotela.

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Vega-Macotela, L.G., Torchynska, T.V. & Polupan, G. Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots. J Mater Sci: Mater Electron 28, 7126–7131 (2017). https://doi.org/10.1007/s10854-017-6536-z

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  • DOI: https://doi.org/10.1007/s10854-017-6536-z

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