Abstract
GaAs/Al0.30Ga0.70As/AlGaInAs/ heterostructures grown by molecular beam epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after thermal annealing at 640 °C for 2 h. Two types of QD structures with the different compositions of cap** layers: (Al0.30Ga0.70As (#1) and Al0.10Ga0.75In0.15As (#2)), are studied using the photoluminescence (PL), X-ray diffraction (XRD) and high-resolution XRD (HR-XRD) techniques. The high PL intensity, smaller half width of PL bands and lower energy of the ground state (GS) emission are detected in the structure with the Al0.10Ga0.75In0.15As cap** layer. The blue shift of PL spectra is detected after annealing and this shift is more significant in the structure with Al0.10Ga0.75In0.15As cap** as well. The last effect has been explained by the efficient Ga/In inter-diffusion at the AlGaInAs/InAs QD interface in #2 owing to the smaller In-As binding energy in comparison with Al-As and Ga-As ones in the studied alloy. The composition variation of the QDs and quantum wells (QWs) due to Ga/In intermixing at annealing has been modeled on the base of the numerical simulation of HR-XRD scans with the help of X′ Pert Epitaxy software.
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The authors thank the CONACYT (258224) and SIP-IPN (20195080) for the financial support.
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Polupan, G., Torchynska, T., Vega Macotela, L.G. et al. Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing. J Mater Sci: Mater Electron 31, 2643–2649 (2020). https://doi.org/10.1007/s10854-019-02803-x
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DOI: https://doi.org/10.1007/s10854-019-02803-x