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“Ideality” of a “Nonideal” Plasma
AbstractTwo chemical models of the plasma, which describe the mixture of free electrons, ions, and atoms, are derived using identity transformations...
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Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode
AbstractThe temperature dependence of diode ideality factor in InGaN-based UV-A light-emitting diode has been investigated using the current–voltage...
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Physical origins of the ideality factor of the current equation in Schottky junctions
After the carrier drift velocity at the semiconductor / metal interface is considered, current transport in Schottky diodes under a forward electric...
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Determining p-n Junction Band Gap
The present chapter describes a new technique for the accurate and reliable determination of p-n diode bandgap energy. The method makes no... -
New Parameter Extraction Techniques
A simplified graphical method, termed the current-voltage-temperature (I-V-T) method, is proposed for extracting static parameters of Schottky... -
Analytical assessment of Schottky diodes based on CdS/Si heterostructure: current, capacitance, and conductance analysis using TCAD
An investigation was conducted on the characteristics of current and voltage in a heterostructure setup comprising a CdS/Silicon Schottky barrier...
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Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction
GaSe 0.75 S 0.25 having layered structure is a potential semiconductor compound for optoelectronics and two-dimensional materials technologies. Optical...
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Impedance spectroscopy study of Al/p-Cu2ZnSnS4 thin films Schottky diode grown by a two-stage method
In this paper, we report the electrical properties of Al/p-Cu 2 ZnSnS 4 thin film Schottky diode fabricated by a two-step method. Cu 2 ZnSnS 4 ingot was...
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Detailed analysis of the electrical and photovoltaic characteristics of Al/Cu2ZnGeSe4/n-Si/Ag heterojunction
P-type Cu 2 ZnGeSe 4 (CZGSe 4 ) films were created on an n-type Silicon wafer using a thermal evaporation approach, resulting in the development of...
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Experimental Data Base
As an instructive example, experimental data of Ag/n-Si(111)-(1×1)^i and -(1×1)^i Schottky contacts are discussed in detail. These contacts were... -
Responsivity and photo-transient response of Tb/Al/p-Si heterostructure solar detectors
This work aims to investigate the design, fabrication, and characterization of a novel photodetector for light-sensing applications. The...
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The inventive manufacturing and characterization of Au/BG/p-Si/Al devices for solar cell applications
Novel dye brilliant green (BG) based devices are fabricated using a low–cost spin coating process on a p–type silicon substrate. The front gold...
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Investigation of n-ZnO/p-porous GaAs/p++-GaAs heterostructure for photodetection applications
In this work, we have investigated n-ZnO/p-porous GaAs/p ++ -GaAs heterostructure for low-cost photodetector applications. Solution-based deposition...
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Exploring the spectroscopic and I‑V‑T characteristics advancements of cadmium zinc tungsten phosphate diode
This research accomplished the growth of cadmium zinc tungsten phosphate (CZWP) thin films on both glass and p-Si substrates, employing the sol–gel...
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A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights
This work extensively investigates the operation of an Al/ Si 3 N 4 /p-Si Schottky-type photodiode under dark and varying illumination intensities. The...
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Fabrication and Characterization of the Heterojunction Diode from Ternary Ni1-xCoxO Thin Films on n-Si Substrates by Sol-Gel Method
A simple yet effective method for fabricating heterojunction diodes is presented in this study. It involves the deposition of Ni 1-x Co x O thin films on...
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The impact of annealing on the electrical properties of ITO/n-CdSe Schottky junctions deposited by pulsed laser deposition technique
In the present work, CdSe thin film has been deposited on indium tin oxide (ITO)-coated glass substrate by the pulsed laser deposition (PLD)...
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Preparation of a nanostructured CdTe@CdS core–shell/Si photodetector by two-step laser ablation in liquid
In this study, CdTe@CdS core–shell nanoparticles (NPs) were synthesized by pulsed laser ablation in distilled water. X-ray diffraction results showed...
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Single-diode multi-junction solar cell models five-parameter estimation method
This work presents a simplified and efficient method to estimate single-diode multi-junction solar cells model parameters such as ideality factor A,...
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Effect of Temperature on the Electrical and Optical Properties of Silver (Ag) Assisted Electrochemically Etched Silicon Nanowires (SINWs)
The present work deals with the study of the effect of temperature on the Raman spectroscopy and electrical properties of the silicon nanowires. The...