Abstract
Novel dye brilliant green (BG) based devices are fabricated using a low–cost spin coating process on a p–type silicon substrate. The front gold contact is deposited onto the BG film at a high vacuum. The current–voltage measurements in the dark and under various light intensities at room temperature are performed. Experimental data are exploited, and electrical parameters are extracted to describe a non–ideal diode behavior of the BG–based device. The Cheung and Norde approximations and thermionic emission theory are utilized to extract the suitable electrical parameters, including ideality factor (n), barrier height (Φb), series resistance (RS), open-circuit voltage (VOC), short circuit current (ISC), and interface state density (Dit). The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of Au/BG/p–Si/Alheterostructure are described in the dark and room temperature. Furthermore, the influence of the resistance series and the interface states on the operation of the diodes in the dark and illumination modes is also emphasized.
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Acknowledgements
The work is included in the PRFU2022 project under contract number B00L02UN310220220001. Everyone reading this article is praying for my Parents' s mercy. First author would like to thank colleagues in Dicle University (Dubtam research center) Diyarbakir Turkey for their help. İlk yazar, Dicle Üniversitesi'ndeki (Dubtam Araştırma Merkezi) meslektaşlarına yardımlarından dolayı teşekkür eder. https://www.mendeley.com/impact/mostefa-benhalilibahttps://orcid.org/0000-0001-6507-3663
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Benhaliliba, M., Ocak, Y.S. The inventive manufacturing and characterization of Au/BG/p-Si/Al devices for solar cell applications. Appl. Phys. A 130, 371 (2024). https://doi.org/10.1007/s00339-024-07521-8
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DOI: https://doi.org/10.1007/s00339-024-07521-8